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High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors

High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors
High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors
We have observed multimode transport and high ON/OFF ratio in silicon nanochain devices. Silicon nanochains grown by thermal evaporation of SiO solid sources consisted of chains of silicon nanocrystals ~10 nm in diameter, separated by SiO2 regions. The devices were fabricated using electron beam lithography on SiO2 thermally grown on silicon substrate. These devices exhibited high ON/OFF current ratio up to 104. The inverse subthreshold slope as small as ~500 mV/decade was observed in these devices. Therefore, we believe silicon nanochains hold great potential to be used in field effect transistors.
0003-6951
113108-[4pp]
Rafiq, M.A.
93738636-f6a7-4133-9c70-007cc9321d82
Masubuchi, K.
9b684d1f-a7da-44b5-9d00-0afff8d3b95f
Durrani, Z.A.K.
193df358-3ef5-4cd9-8f77-359c697e839d
Colli, A.
e01622d0-c197-4266-b11c-88ee2a42cd4f
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Milne, W.I.
3061f67c-bf3b-48fa-a193-8ca53fec82f3
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Rafiq, M.A.
93738636-f6a7-4133-9c70-007cc9321d82
Masubuchi, K.
9b684d1f-a7da-44b5-9d00-0afff8d3b95f
Durrani, Z.A.K.
193df358-3ef5-4cd9-8f77-359c697e839d
Colli, A.
e01622d0-c197-4266-b11c-88ee2a42cd4f
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Milne, W.I.
3061f67c-bf3b-48fa-a193-8ca53fec82f3
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde

Rafiq, M.A., Masubuchi, K., Durrani, Z.A.K., Colli, A., Mizuta, H., Milne, W.I. and Oda, S. (2012) High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors. Applied Physics Letters, 100 (11), 113108-[4pp]. (doi:10.1063/1.3694046).

Record type: Article

Abstract

We have observed multimode transport and high ON/OFF ratio in silicon nanochain devices. Silicon nanochains grown by thermal evaporation of SiO solid sources consisted of chains of silicon nanocrystals ~10 nm in diameter, separated by SiO2 regions. The devices were fabricated using electron beam lithography on SiO2 thermally grown on silicon substrate. These devices exhibited high ON/OFF current ratio up to 104. The inverse subthreshold slope as small as ~500 mV/decade was observed in these devices. Therefore, we believe silicon nanochains hold great potential to be used in field effect transistors.

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Published date: 12 March 2012
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 337972
URI: https://eprints.soton.ac.uk/id/eprint/337972
ISSN: 0003-6951
PURE UUID: 4660d6a1-2fdf-4c7c-8b81-3ea2fd663a8c

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Date deposited: 09 May 2012 11:19
Last modified: 16 Jul 2019 22:05

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Contributors

Author: M.A. Rafiq
Author: K. Masubuchi
Author: Z.A.K. Durrani
Author: A. Colli
Author: H. Mizuta
Author: W.I. Milne
Author: S. Oda

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