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Realization of fully tunable FinFET double quantum dots with close proximity plunger gates

Record type: Conference or Workshop Item (Paper)

This paper presents the realization of a FinFET double quantum dots transistor on ultrathin silicon-on-insulator. In this platform, three Al FinFET gates surround the Si device layer channel forming electrically tunable potential barriers; Si plunger side gates are included to enable precise control of the quantum dots potential. This device is fabricated using a multi-layer electron beam lithography process that is fully compatible with metal oxide semiconductor technology. Low temperature electrical measurements and coulomb oscillation characteristics have demonstrated the capability of this structure to form double quantum dots with adjustable interdot coupling.

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Citation

Alkhalil, F.M., Perez-Barraza, J.I., Husain, M.K., Lin, Y.P., Lambert, N., Chong, H.M.H, Tsuchiya, Y., Williams, D.A., Ferguson, A.J. and Mizuta, H. (2012) Realization of fully tunable FinFET double quantum dots with close proximity plunger gates At 12th International Conference on Nanotechnology (IEEE NANO 2012), United Kingdom. 20 - 23 Aug 2012. 2 pp. (doi:10.1109/NANO.2012.6321993).

More information

Submitted date: August 2012
Published date: October 2012
Venue - Dates: 12th International Conference on Nanotechnology (IEEE NANO 2012), United Kingdom, 2012-08-20 - 2012-08-23
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 337975
URI: http://eprints.soton.ac.uk/id/eprint/337975
PURE UUID: 1b24639e-6f6e-4505-b1d8-e17721004314

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Date deposited: 09 May 2012 11:55
Last modified: 18 Jul 2017 05:59

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Contributors

Author: F.M. Alkhalil
Author: J.I. Perez-Barraza
Author: M.K. Husain
Author: Y.P. Lin
Author: N. Lambert
Author: H.M.H Chong
Author: Y. Tsuchiya
Author: D.A. Williams
Author: A.J. Ferguson
Author: H. Mizuta

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