Realization of fully tunable FinFET double quantum dots with close proximity plunger gates


Alkhalil, F.M., Perez-Barraza, J.I., Husain, M.K., Lin, Y.P., Lambert, N., Chong, H.M.H, Tsuchiya, Y., Williams, D.A., Ferguson, A.J. and Mizuta, H. (2012) Realization of fully tunable FinFET double quantum dots with close proximity plunger gates At 12th International Conference on Nanotechnology (IEEE NANO 2012), United Kingdom. 20 - 23 Aug 2012. 2 pp. (doi:10.1109/NANO.2012.6321993).

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Description/Abstract

This paper presents the realization of a FinFET double quantum dots transistor on ultrathin silicon-on-insulator. In this platform, three Al FinFET gates surround the Si device layer channel forming electrically tunable potential barriers; Si plunger side gates are included to enable precise control of the quantum dots potential. This device is fabricated using a multi-layer electron beam lithography process that is fully compatible with metal oxide semiconductor technology. Low temperature electrical measurements and coulomb oscillation characteristics have demonstrated the capability of this structure to form double quantum dots with adjustable interdot coupling.

Item Type: Conference or Workshop Item (Paper)
Digital Object Identifier (DOI): doi:10.1109/NANO.2012.6321993
Venue - Dates: 12th International Conference on Nanotechnology (IEEE NANO 2012), United Kingdom, 2012-08-20 - 2012-08-23
Related URLs:
Subjects:
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 337975
Date :
Date Event
August 2012Submitted
October 2012Published
Date Deposited: 09 May 2012 11:55
Last Modified: 17 Apr 2017 17:12
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/337975

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