The University of Southampton
University of Southampton Institutional Repository

Realization of fully tunable FinFET double quantum dots with close proximity plunger gates

Realization of fully tunable FinFET double quantum dots with close proximity plunger gates
Realization of fully tunable FinFET double quantum dots with close proximity plunger gates
This paper presents the realization of a FinFET double quantum dots transistor on ultrathin silicon-on-insulator. In this platform, three Al FinFET gates surround the Si device layer channel forming electrically tunable potential barriers; Si plunger side gates are included to enable precise control of the quantum dots potential. This device is fabricated using a multi-layer electron beam lithography process that is fully compatible with metal oxide semiconductor technology. Low temperature electrical measurements and coulomb oscillation characteristics have demonstrated the capability of this structure to form double quantum dots with adjustable interdot coupling.
Alkhalil, F.M.
df40c05d-ac9b-40b4-a07e-188ef427dae6
Perez-Barraza, J.I.
e5c219ca-1f46-4bcb-9714-24f37743a248
Husain, M.K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Lin, Y.P.
f87decc8-ea4f-42b7-a7ac-bf428a628add
Lambert, N.
3004fcf7-1a30-4b10-8024-e527eaddf160
Chong, H.M.H
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Williams, D.A.
4c524d96-6be7-4083-9cba-b7fe9b4dcbe0
Ferguson, A.J.
8c871f79-6f24-44cd-961e-04258746cb6e
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Alkhalil, F.M.
df40c05d-ac9b-40b4-a07e-188ef427dae6
Perez-Barraza, J.I.
e5c219ca-1f46-4bcb-9714-24f37743a248
Husain, M.K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Lin, Y.P.
f87decc8-ea4f-42b7-a7ac-bf428a628add
Lambert, N.
3004fcf7-1a30-4b10-8024-e527eaddf160
Chong, H.M.H
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Williams, D.A.
4c524d96-6be7-4083-9cba-b7fe9b4dcbe0
Ferguson, A.J.
8c871f79-6f24-44cd-961e-04258746cb6e
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9

Alkhalil, F.M., Perez-Barraza, J.I., Husain, M.K., Lin, Y.P., Lambert, N., Chong, H.M.H, Tsuchiya, Y., Williams, D.A., Ferguson, A.J. and Mizuta, H. (2012) Realization of fully tunable FinFET double quantum dots with close proximity plunger gates. 12th International Conference on Nanotechnology (IEEE NANO 2012), United Kingdom. 20 - 23 Aug 2012. 2 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

This paper presents the realization of a FinFET double quantum dots transistor on ultrathin silicon-on-insulator. In this platform, three Al FinFET gates surround the Si device layer channel forming electrically tunable potential barriers; Si plunger side gates are included to enable precise control of the quantum dots potential. This device is fabricated using a multi-layer electron beam lithography process that is fully compatible with metal oxide semiconductor technology. Low temperature electrical measurements and coulomb oscillation characteristics have demonstrated the capability of this structure to form double quantum dots with adjustable interdot coupling.

Text
Feras_Alkhalil_-_Abstract_for_IEEE_NANO_2012.pdf - Other
Restricted to Repository staff only
Request a copy

More information

Submitted date: August 2012
Published date: October 2012
Venue - Dates: 12th International Conference on Nanotechnology (IEEE NANO 2012), United Kingdom, 2012-08-20 - 2012-08-23
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 337975
URI: https://eprints.soton.ac.uk/id/eprint/337975
PURE UUID: 1b24639e-6f6e-4505-b1d8-e17721004314
ORCID for H.M.H Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 09 May 2012 11:55
Last modified: 06 Jun 2018 12:37

Export record

Contributors

Author: F.M. Alkhalil
Author: J.I. Perez-Barraza
Author: M.K. Husain
Author: Y.P. Lin
Author: N. Lambert
Author: H.M.H Chong ORCID iD
Author: Y. Tsuchiya
Author: D.A. Williams
Author: A.J. Ferguson
Author: H. Mizuta

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×