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VLSI Compatible parallel fabrication of scalable few electron silicon quantum dots

VLSI Compatible parallel fabrication of scalable few electron silicon quantum dots
VLSI Compatible parallel fabrication of scalable few electron silicon quantum dots
144 highly tuneable high density lithographically defined Si double quantum dots (DQDs) are fabricated for the first time in parallel via a scalable VLSI compatible fabrication process for the realisation of single electron qubits for quantum computing. 25 nm DQDs with less than 5 nm in dimensional variation are achieved via the use of Hydrogen silsesquioxane resist and electron beam lithography. Repeatable coulomb oscillations and coulomb diamonds signifying single electron tunneling are observed in the electrical characteristics of a prototype DQD structure. This demonstrates the viability and dimensionality of our system and paves the way for single electron spin manipulation in scalable Si based systems
Lin, Y.P.
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Perez-Barraza, J.I.
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Husain, M.K.
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Alkhalil, F.M.
df40c05d-ac9b-40b4-a07e-188ef427dae6
Lambert, N.
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Chong, H.M.H.
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Fersuon, A.J.
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Williams, D.A.
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Mizuta, H.
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Lin, Y.P.
f87decc8-ea4f-42b7-a7ac-bf428a628add
Perez-Barraza, J.I.
e5c219ca-1f46-4bcb-9714-24f37743a248
Husain, M.K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Alkhalil, F.M.
df40c05d-ac9b-40b4-a07e-188ef427dae6
Lambert, N.
3004fcf7-1a30-4b10-8024-e527eaddf160
Chong, H.M.H.
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Fersuon, A.J.
ed750cba-bd94-49c0-bf6f-ad01cec862de
Williams, D.A.
4c524d96-6be7-4083-9cba-b7fe9b4dcbe0
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9

Lin, Y.P., Perez-Barraza, J.I., Husain, M.K., Alkhalil, F.M., Lambert, N., Chong, H.M.H., Fersuon, A.J., Williams, D.A. and Mizuta, H. (2012) VLSI Compatible parallel fabrication of scalable few electron silicon quantum dots. 12th International Conference on Nanotechnology (IEEE NANO 2012), United Kingdom. 20 - 23 Aug 2012. 2 pp . (Submitted)

Record type: Conference or Workshop Item (Paper)

Abstract

144 highly tuneable high density lithographically defined Si double quantum dots (DQDs) are fabricated for the first time in parallel via a scalable VLSI compatible fabrication process for the realisation of single electron qubits for quantum computing. 25 nm DQDs with less than 5 nm in dimensional variation are achieved via the use of Hydrogen silsesquioxane resist and electron beam lithography. Repeatable coulomb oscillations and coulomb diamonds signifying single electron tunneling are observed in the electrical characteristics of a prototype DQD structure. This demonstrates the viability and dimensionality of our system and paves the way for single electron spin manipulation in scalable Si based systems

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More information

Submitted date: August 2012
Venue - Dates: 12th International Conference on Nanotechnology (IEEE NANO 2012), United Kingdom, 2012-08-20 - 2012-08-23
Related URLs:
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 337976
URI: https://eprints.soton.ac.uk/id/eprint/337976
PURE UUID: 10b18d50-45bc-4b4b-9bb0-76ce45decadd
ORCID for H.M.H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 09 May 2012 13:20
Last modified: 06 Jun 2018 12:37

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