VLSI Compatible parallel fabrication of scalable few electron silicon quantum dots
VLSI Compatible parallel fabrication of scalable few electron silicon quantum dots
144 highly tuneable high density lithographically defined Si double quantum dots (DQDs) are fabricated for the first time in parallel via a scalable VLSI compatible fabrication process for the realisation of single electron qubits for quantum computing. 25 nm DQDs with less than 5 nm in dimensional variation are achieved via the use of Hydrogen silsesquioxane resist and electron beam lithography. Repeatable coulomb oscillations and coulomb diamonds signifying single electron tunneling are observed in the electrical characteristics of a prototype DQD structure. This demonstrates the viability and dimensionality of our system and paves the way for single electron spin manipulation in scalable Si based systems
Lin, Y.P.
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Perez-Barraza, J.I.
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Husain, M.K.
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Alkhalil, F.M.
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Lambert, N.
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Chong, H.M.H.
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Fersuon, A.J.
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Williams, D.A.
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Mizuta, H.
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Lin, Y.P.
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Perez-Barraza, J.I.
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Husain, M.K.
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Alkhalil, F.M.
df40c05d-ac9b-40b4-a07e-188ef427dae6
Lambert, N.
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Chong, H.M.H.
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Fersuon, A.J.
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Williams, D.A.
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Mizuta, H.
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Lin, Y.P., Perez-Barraza, J.I., Husain, M.K., Alkhalil, F.M., Lambert, N., Chong, H.M.H., Fersuon, A.J., Williams, D.A. and Mizuta, H.
(2012)
VLSI Compatible parallel fabrication of scalable few electron silicon quantum dots.
12th International Conference on Nanotechnology (IEEE NANO 2012), Birmingham, United Kingdom.
20 - 23 Aug 2012.
2 pp
.
(Submitted)
Record type:
Conference or Workshop Item
(Paper)
Abstract
144 highly tuneable high density lithographically defined Si double quantum dots (DQDs) are fabricated for the first time in parallel via a scalable VLSI compatible fabrication process for the realisation of single electron qubits for quantum computing. 25 nm DQDs with less than 5 nm in dimensional variation are achieved via the use of Hydrogen silsesquioxane resist and electron beam lithography. Repeatable coulomb oscillations and coulomb diamonds signifying single electron tunneling are observed in the electrical characteristics of a prototype DQD structure. This demonstrates the viability and dimensionality of our system and paves the way for single electron spin manipulation in scalable Si based systems
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Submitted date: August 2012
Venue - Dates:
12th International Conference on Nanotechnology (IEEE NANO 2012), Birmingham, United Kingdom, 2012-08-20 - 2012-08-23
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 337976
URI: http://eprints.soton.ac.uk/id/eprint/337976
PURE UUID: 10b18d50-45bc-4b4b-9bb0-76ce45decadd
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Date deposited: 09 May 2012 13:20
Last modified: 15 Mar 2024 03:30
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Contributors
Author:
Y.P. Lin
Author:
J.I. Perez-Barraza
Author:
M.K. Husain
Author:
F.M. Alkhalil
Author:
N. Lambert
Author:
H.M.H. Chong
Author:
A.J. Fersuon
Author:
D.A. Williams
Author:
H. Mizuta
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