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Modulation of the absorption coefficient at 1.3µm in Ge/SiGe multiple quantum well heterostructures on silicon

Modulation of the absorption coefficient at 1.3µm in Ge/SiGe multiple quantum well heterostructures on silicon
Modulation of the absorption coefficient at 1.3µm in Ge/SiGe multiple quantum well heterostructures on silicon
We report modulation of the absorption coefficient at 1.3µm in Ge/SiGe multiple quantum well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering was exploited to increase the direct optical bandgap in the Ge quantum wells. We grew 9nm-thick Ge quantum wells on a relaxed Si0.22Ge0.78 buffer and a contrast in the absorption coefficient of a factor of greater than 3.2 was achieved in the spectral range 1290-1315nm.
0146-9592
4158-4160
Lever, L.
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Hu, Y.
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Myronov, M.
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Liu, X.
878efcac-76c6-4ca0-8f4a-425f1e9abdac
Owens, N.
00521f1e-a196-4fe7-a4a3-f72d70785015
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Marko, I.P.
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Sweeney, S.J.
e5ed01cb-8366-43d6-a69c-9dd38cb2211e
Ikonić, Z.
d4f15f4f-16f8-4bd4-82eb-53585ef9e245
Leadley, D.R.
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Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Kelsall, R.W.
82f442cd-66f0-4902-89af-a2d126e2d0c8
Lever, L.
a0f9718b-94e2-4c75-92f5-5cd3915e80b5
Hu, Y.
64fd97b0-7ac6-458b-8e89-5ddc6b49c448
Myronov, M.
4e4a5ce0-a433-4654-a875-e939c99d0ffe
Liu, X.
878efcac-76c6-4ca0-8f4a-425f1e9abdac
Owens, N.
00521f1e-a196-4fe7-a4a3-f72d70785015
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Marko, I.P.
6b4d76f0-7c5c-4500-8cea-77933f8893e8
Sweeney, S.J.
e5ed01cb-8366-43d6-a69c-9dd38cb2211e
Ikonić, Z.
d4f15f4f-16f8-4bd4-82eb-53585ef9e245
Leadley, D.R.
02284a16-afed-4fa7-8507-a3673e56647f
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Kelsall, R.W.
82f442cd-66f0-4902-89af-a2d126e2d0c8

Lever, L., Hu, Y., Myronov, M., Liu, X., Owens, N., Gardes, F.Y., Marko, I.P., Sweeney, S.J., Ikonić, Z., Leadley, D.R., Reed, G.T. and Kelsall, R.W. (2011) Modulation of the absorption coefficient at 1.3µm in Ge/SiGe multiple quantum well heterostructures on silicon. Optics Letters, 36 (21), 4158-4160. (doi:10.1364/OL.36.004158).

Record type: Article

Abstract

We report modulation of the absorption coefficient at 1.3µm in Ge/SiGe multiple quantum well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering was exploited to increase the direct optical bandgap in the Ge quantum wells. We grew 9nm-thick Ge quantum wells on a relaxed Si0.22Ge0.78 buffer and a contrast in the absorption coefficient of a factor of greater than 3.2 was achieved in the spectral range 1290-1315nm.

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More information

Published date: 1 November 2011
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 338285
URI: https://eprints.soton.ac.uk/id/eprint/338285
ISSN: 0146-9592
PURE UUID: 18afaea6-8016-4fc7-a47f-ab1d722db071

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Date deposited: 11 May 2012 15:27
Last modified: 23 Jan 2019 17:31

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Contributors

Author: L. Lever
Author: Y. Hu
Author: M. Myronov
Author: X. Liu
Author: N. Owens
Author: F.Y. Gardes
Author: I.P. Marko
Author: S.J. Sweeney
Author: Z. Ikonić
Author: D.R. Leadley
Author: G.T. Reed
Author: R.W. Kelsall

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