Phase change gallium and germanium chalcogenides for optical electronic and plasmonic switching


Hewak, D.W., Huang, C.C., Gholipour, B., Knight, K., Li, S., Sámson, Z.L., MacDonald, K.F., Zheludev, N.I., Yen, S.C., Shiue, C.D., Tsai, D.P., De Angelis, F., Di Fabrizio, E., Guerin, S. and Hayden, B. (2010) Phase change gallium and germanium chalcogenides for optical electronic and plasmonic switching At EPCOS 2010: European Phase-Change and Ovonics Science Conference, Italy. 01 Sep 2010.

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Description/Abstract

We show that the phase-change technology behind rewritable optical disks and the latest generation of electronic memories can also offer applications in active plasmonics and metamaterials. A range of chalcogenides have been fabricated and characterized for their optical, thermal and electrical properties. Experimental demonstrations show that excitation-induced refractive index changes in gallium lanthanum sulphide (Ga:La:S), a can provide high contrast switching functionality. We have fabricated a silver/GLS interface which can support surface plasmon-polaritons and also incorporated a Ga:La:S thin film with a metamaterials based on arrays of resonance cells. We demonstrate both plasmonic modulation and metamaterials switching through reversible refractive index changes in the chalcogenide.

Item Type: Conference or Workshop Item (Paper)
Venue - Dates: EPCOS 2010: European Phase-Change and Ovonics Science Conference, Italy, 2010-09-01 - 2010-09-01
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Organisations: Optoelectronics Research Centre
ePrint ID: 339967
Date :
Date Event
September 2010e-pub ahead of print
Date Deposited: 06 Jun 2012 12:59
Last Modified: 23 Feb 2017 07:26
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/339967

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