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Phase change gallium and germanium chalcogenides for optical electronic and plasmonic switching

Phase change gallium and germanium chalcogenides for optical electronic and plasmonic switching
Phase change gallium and germanium chalcogenides for optical electronic and plasmonic switching
We show that the phase-change technology behind rewritable optical disks and the latest generation of electronic memories can also offer applications in active plasmonics and metamaterials. A range of chalcogenides have been fabricated and characterized for their optical, thermal and electrical properties. Experimental demonstrations show that excitation-induced refractive index changes in gallium lanthanum sulphide (Ga:La:S), a can provide high contrast switching functionality. We have fabricated a silver/GLS interface which can support surface plasmon-polaritons and also incorporated a Ga:La:S thin film with a metamaterials based on arrays of resonance cells. We demonstrate both plasmonic modulation and metamaterials switching through reversible refractive index changes in the chalcogenide.
Hewak, Daniel
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Huang, Chung-Che
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Gholipour, Behrad
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Knight, Kenton
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Li, S.
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Sámson, Z.L
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MacDonald, Kevin
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Zheludev, Nikolai
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Yen, S.C.
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Shiue, C.D.
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Tsai, D.P.
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De Angelis, F.
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Di Fabrizio, E.
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Guerin, S.
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Hayden, Brian
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Hewak, Daniel
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Huang, Chung-Che
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Gholipour, Behrad
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Knight, Kenton
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Li, S.
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Sámson, Z.L
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MacDonald, Kevin
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Zheludev, Nikolai
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Yen, S.C.
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Shiue, C.D.
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Tsai, D.P.
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De Angelis, F.
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Di Fabrizio, E.
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Guerin, S.
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Hayden, Brian
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Hewak, Daniel, Huang, Chung-Che, Gholipour, Behrad, Knight, Kenton, Li, S., Sámson, Z.L, MacDonald, Kevin, Zheludev, Nikolai, Yen, S.C., Shiue, C.D., Tsai, D.P., De Angelis, F., Di Fabrizio, E., Guerin, S. and Hayden, Brian (2010) Phase change gallium and germanium chalcogenides for optical electronic and plasmonic switching At EPCOS 2010: European Phase-Change and Ovonics Science Conference, Italy. 01 Sep 2010.

Record type: Conference or Workshop Item (Paper)

Abstract

We show that the phase-change technology behind rewritable optical disks and the latest generation of electronic memories can also offer applications in active plasmonics and metamaterials. A range of chalcogenides have been fabricated and characterized for their optical, thermal and electrical properties. Experimental demonstrations show that excitation-induced refractive index changes in gallium lanthanum sulphide (Ga:La:S), a can provide high contrast switching functionality. We have fabricated a silver/GLS interface which can support surface plasmon-polaritons and also incorporated a Ga:La:S thin film with a metamaterials based on arrays of resonance cells. We demonstrate both plasmonic modulation and metamaterials switching through reversible refractive index changes in the chalcogenide.

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e-pub ahead of print date: September 2010
Published date: 2010
Venue - Dates: EPCOS 2010: European Phase-Change and Ovonics Science Conference, Italy, 2010-09-01 - 2010-09-01
Organisations: Faculty of Natural and Environmental Sciences, Optoelectronics Research Centre, Electrochemistry

Identifiers

Local EPrints ID: 339967
URI: http://eprints.soton.ac.uk/id/eprint/339967
PURE UUID: fa6d54c7-11a0-44aa-a185-a3c98f70d8ea
ORCID for Daniel Hewak: ORCID iD orcid.org/0000-0002-2093-5773
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Kevin MacDonald: ORCID iD orcid.org/0000-0002-3877-2976
ORCID for Brian Hayden: ORCID iD orcid.org/0000-0002-7762-1812

Catalogue record

Date deposited: 06 Jun 2012 12:59
Last modified: 18 Jul 2017 05:50

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Contributors

Author: Daniel Hewak ORCID iD
Author: Chung-Che Huang ORCID iD
Author: Kenton Knight
Author: S. Li
Author: Z.L Sámson
Author: Kevin MacDonald ORCID iD
Author: S.C. Yen
Author: C.D. Shiue
Author: D.P. Tsai
Author: F. De Angelis
Author: E. Di Fabrizio
Author: S. Guerin
Author: Brian Hayden ORCID iD

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