Phase change gallium and germanium chalcogenides for optical electronic and plasmonic switching


Hewak, Daniel, Huang, Chung-Che, Gholipour, Behrad, Knight, Kenton, Li, S., Sámson, Z.L, MacDonald, Kevin, Zheludev, Nikolai, Yen, S.C., Shiue, C.D., Tsai, D.P., De Angelis, F., Di Fabrizio, E., Guerin, S. and Hayden, Brian (2010) Phase change gallium and germanium chalcogenides for optical electronic and plasmonic switching At EPCOS 2010: European Phase-Change and Ovonics Science Conference, Italy. 01 Sep 2010.

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Description/Abstract

We show that the phase-change technology behind rewritable optical disks and the latest generation of electronic memories can also offer applications in active plasmonics and metamaterials. A range of chalcogenides have been fabricated and characterized for their optical, thermal and electrical properties. Experimental demonstrations show that excitation-induced refractive index changes in gallium lanthanum sulphide (Ga:La:S), a can provide high contrast switching functionality. We have fabricated a silver/GLS interface which can support surface plasmon-polaritons and also incorporated a Ga:La:S thin film with a metamaterials based on arrays of resonance cells. We demonstrate both plasmonic modulation and metamaterials switching through reversible refractive index changes in the chalcogenide.

Item Type: Conference or Workshop Item (Paper)
Venue - Dates: EPCOS 2010: European Phase-Change and Ovonics Science Conference, Italy, 2010-09-01 - 2010-09-01
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Organisations: Faculty of Natural and Environmental Sciences, Optoelectronics Research Centre, Electrochemistry, ORC Research
ePrint ID: 339967
Date :
Date Event
September 2010e-pub ahead of print
2010Published
Date Deposited: 06 Jun 2012 12:59
Last Modified: 20 Jun 2017 16:36
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/339967

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