Phase change gallium and germanium chalcogenides for optical electronic and plasmonic switching
Phase change gallium and germanium chalcogenides for optical electronic and plasmonic switching
We show that the phase-change technology behind rewritable optical disks and the latest generation of electronic memories can also offer applications in active plasmonics and metamaterials. A range of chalcogenides have been fabricated and characterized for their optical, thermal and electrical properties. Experimental demonstrations show that excitation-induced refractive index changes in gallium lanthanum sulphide (Ga:La:S), a can provide high contrast switching functionality. We have fabricated a silver/GLS interface which can support surface plasmon-polaritons and also incorporated a Ga:La:S thin film with a metamaterials based on arrays of resonance cells. We demonstrate both plasmonic modulation and metamaterials switching through reversible refractive index changes in the chalcogenide.
Hewak, Daniel
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Huang, Chung-Che
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Gholipour, Behrad
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Knight, Kenton
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Li, S.
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Sámson, Z.L
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MacDonald, Kevin
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Zheludev, Nikolai
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Yen, S.C.
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Shiue, C.D.
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Tsai, D.P.
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De Angelis, F.
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Di Fabrizio, E.
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Guerin, S.
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Hayden, Brian
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2010
Hewak, Daniel
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Huang, Chung-Che
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Gholipour, Behrad
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Knight, Kenton
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Li, S.
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Sámson, Z.L
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MacDonald, Kevin
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Zheludev, Nikolai
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Yen, S.C.
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Shiue, C.D.
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Tsai, D.P.
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De Angelis, F.
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Di Fabrizio, E.
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Guerin, S.
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Hayden, Brian
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Hewak, Daniel, Huang, Chung-Che, Gholipour, Behrad, Knight, Kenton, Li, S., Sámson, Z.L, MacDonald, Kevin, Zheludev, Nikolai, Yen, S.C., Shiue, C.D., Tsai, D.P., De Angelis, F., Di Fabrizio, E., Guerin, S. and Hayden, Brian
(2010)
Phase change gallium and germanium chalcogenides for optical electronic and plasmonic switching.
EPCOS 2010: European Phase-Change and Ovonics Science Conference, , Milano, Italy.
01 Sep 2010.
2 pp
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
We show that the phase-change technology behind rewritable optical disks and the latest generation of electronic memories can also offer applications in active plasmonics and metamaterials. A range of chalcogenides have been fabricated and characterized for their optical, thermal and electrical properties. Experimental demonstrations show that excitation-induced refractive index changes in gallium lanthanum sulphide (Ga:La:S), a can provide high contrast switching functionality. We have fabricated a silver/GLS interface which can support surface plasmon-polaritons and also incorporated a Ga:La:S thin film with a metamaterials based on arrays of resonance cells. We demonstrate both plasmonic modulation and metamaterials switching through reversible refractive index changes in the chalcogenide.
More information
e-pub ahead of print date: September 2010
Published date: 2010
Venue - Dates:
EPCOS 2010: European Phase-Change and Ovonics Science Conference, , Milano, Italy, 2010-09-01 - 2010-09-01
Organisations:
Faculty of Natural and Environmental Sciences, Optoelectronics Research Centre, Electrochemistry
Identifiers
Local EPrints ID: 339967
URI: http://eprints.soton.ac.uk/id/eprint/339967
PURE UUID: fa6d54c7-11a0-44aa-a185-a3c98f70d8ea
Catalogue record
Date deposited: 06 Jun 2012 12:59
Last modified: 15 Mar 2024 03:23
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Contributors
Author:
Behrad Gholipour
Author:
Kenton Knight
Author:
S. Li
Author:
Z.L Sámson
Author:
S.C. Yen
Author:
C.D. Shiue
Author:
D.P. Tsai
Author:
F. De Angelis
Author:
E. Di Fabrizio
Author:
S. Guerin
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