Hewak, D.W., Huang, C.C., Gholipour, B., Knight, K., Li, S., Sámson, Z.L., MacDonald, K.F., Zheludev, N.I., Yen, S.C., Shiue, C.D., Tsai, D.P., De Angelis, F., Di Fabrizio, E., Guerin, S. and Hayden, B.
Phase change gallium and germanium chalcogenides for optical electronic and plasmonic switching
At EPCOS 2010: European Phase-Change and Ovonics Science Conference, Italy.
01 Sep 2010.
We show that the phase-change technology behind rewritable optical disks and the latest generation of electronic memories can also offer applications in active plasmonics and metamaterials. A range of chalcogenides have been fabricated and characterized for their optical, thermal and electrical properties. Experimental demonstrations show that excitation-induced refractive index changes in gallium lanthanum sulphide (Ga:La:S), a can provide high contrast switching functionality. We have fabricated a silver/GLS interface which can support surface plasmon-polaritons and also incorporated a Ga:La:S thin film with a metamaterials based on arrays of resonance cells. We demonstrate both plasmonic modulation and metamaterials switching through reversible refractive index changes in the chalcogenide.
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