Temperature dependence of lifetime of 1.3 micron emission from Dy3+-doped Ge-As-S glass modified with very small amount of Ga and CsBr
Temperature dependence of lifetime of 1.3 micron emission from Dy3+-doped Ge-As-S glass modified with very small amount of Ga and CsBr
It has been known that the measured lifetime of the 1.3 µm emission from Dy3+ ions embedded in sulfur-based chalcogenide glass is dramatically modified upon a least compositional adjustment by Ga+CsBr. For example, greater than ten-fold increase of the measured lifetime is typically observed when less than 1 mol% of Ga+CsBr is introduced to Ge-As-S glass. This novel observation is based on spontaneous atomic rearrangement in the vicinity of Dy3+ ions taking place as a result of the compositional modification as well as the hypersensitivity involved in the (6H9/2, 6F11/2) to 6H15/2 transition.
In an effort to get deepened knowledge on the compositional effect, in this study, we have measured the lifetime of 1.3 µm emission as functions of temperature and concentration of Ga+CsBr. As-rich Ge-As-S glasses unmodified or modified with less than 1.0 mol% of Ga+CsBr were prepared, and then decay profiles for the 1.3 µm emission were recorded at various temperatures.
We observe that the measured lifetime, i.e., the first e-folding time, exhibits a very interesting behavior; for modification of up to ~0.4 mol% the lifetime decreases with increasing temperature, as typically observed for multiphonon relaxation dominated transition. However, when concentration of Ga+CsBr reaches ~0.6 mol%, the lifetime keeps almost constant regardless of temperature change. For further increase of the compositional modification up to ~1.0 mol%, the lifetime increases as temperature increases. This novel behavior is discussed in connection with the local structural changes at around Dy3+ ions, and the resulting changes in the oscillator strength as well as the center of gravity of the thermally coupled (6H9/2, 6F11/2) manifold.
Choi, Y.G.
24a6ccc3-a6e5-41cf-a491-d70420a4ac8e
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Choi, Y.G.
24a6ccc3-a6e5-41cf-a491-d70420a4ac8e
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Choi, Y.G., Curry, R.J. and Hewak, D.W.
(2012)
Temperature dependence of lifetime of 1.3 micron emission from Dy3+-doped Ge-As-S glass modified with very small amount of Ga and CsBr.
Photoluminescence in Rare Earths: Photonic Materials and Devices (PRE 12), Kyoto, Japan.
27 - 29 Mar 2012.
Record type:
Conference or Workshop Item
(Paper)
Abstract
It has been known that the measured lifetime of the 1.3 µm emission from Dy3+ ions embedded in sulfur-based chalcogenide glass is dramatically modified upon a least compositional adjustment by Ga+CsBr. For example, greater than ten-fold increase of the measured lifetime is typically observed when less than 1 mol% of Ga+CsBr is introduced to Ge-As-S glass. This novel observation is based on spontaneous atomic rearrangement in the vicinity of Dy3+ ions taking place as a result of the compositional modification as well as the hypersensitivity involved in the (6H9/2, 6F11/2) to 6H15/2 transition.
In an effort to get deepened knowledge on the compositional effect, in this study, we have measured the lifetime of 1.3 µm emission as functions of temperature and concentration of Ga+CsBr. As-rich Ge-As-S glasses unmodified or modified with less than 1.0 mol% of Ga+CsBr were prepared, and then decay profiles for the 1.3 µm emission were recorded at various temperatures.
We observe that the measured lifetime, i.e., the first e-folding time, exhibits a very interesting behavior; for modification of up to ~0.4 mol% the lifetime decreases with increasing temperature, as typically observed for multiphonon relaxation dominated transition. However, when concentration of Ga+CsBr reaches ~0.6 mol%, the lifetime keeps almost constant regardless of temperature change. For further increase of the compositional modification up to ~1.0 mol%, the lifetime increases as temperature increases. This novel behavior is discussed in connection with the local structural changes at around Dy3+ ions, and the resulting changes in the oscillator strength as well as the center of gravity of the thermally coupled (6H9/2, 6F11/2) manifold.
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e-pub ahead of print date: 2012
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Photoluminescence in Rare Earths: Photonic Materials and Devices (PRE 12), Kyoto, Japan, 2012-03-27 - 2012-03-29
Organisations:
Optoelectronics Research Centre
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Local EPrints ID: 340149
URI: http://eprints.soton.ac.uk/id/eprint/340149
PURE UUID: 7d5ad207-dbda-414b-bf33-07548893d6a5
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Date deposited: 13 Jun 2012 13:24
Last modified: 11 Dec 2021 03:00
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Author:
Y.G. Choi
Author:
R.J. Curry
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