Emission from a bismuth doped chalcogenide glass spanning from 1µm to 2.7µm
Emission from a bismuth doped chalcogenide glass spanning from 1µm to 2.7µm
We report emission from a bismuth doped chalcogenide glass with a full width half maximum of 850 nm. The quantum efficiency and lifetime were 32% and 175 µs. We report two new bismuth emission bands at 2000 and 2600 nm.
Hughes, M.A.
15c829d1-0f1b-454b-aa39-6bb53556914a
Suzuki, T.
836441d2-7ba2-4b94-854f-c23f3e10662d
Ohishi, Y.
581e6a89-1e2d-4bb7-9996-8f609e27e195
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Hughes, M.A.
15c829d1-0f1b-454b-aa39-6bb53556914a
Suzuki, T.
836441d2-7ba2-4b94-854f-c23f3e10662d
Ohishi, Y.
581e6a89-1e2d-4bb7-9996-8f609e27e195
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Hughes, M.A., Suzuki, T., Ohishi, Y. and Hewak, D.W.
(2010)
Emission from a bismuth doped chalcogenide glass spanning from 1µm to 2.7µm.
36th European Conference and Exhibition on Optical Communication (ECOC 2010), , Torino, Italy.
18 - 23 Sep 2010.
Record type:
Conference or Workshop Item
(Paper)
Abstract
We report emission from a bismuth doped chalcogenide glass with a full width half maximum of 850 nm. The quantum efficiency and lifetime were 32% and 175 µs. We report two new bismuth emission bands at 2000 and 2600 nm.
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e-pub ahead of print date: 2010
Venue - Dates:
36th European Conference and Exhibition on Optical Communication (ECOC 2010), , Torino, Italy, 2010-09-18 - 2010-09-23
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 340605
URI: http://eprints.soton.ac.uk/id/eprint/340605
PURE UUID: d2152020-9cc8-4b53-87f1-cdc14b29dc7c
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Date deposited: 27 Jun 2012 10:52
Last modified: 14 Mar 2024 11:26
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Contributors
Author:
M.A. Hughes
Author:
T. Suzuki
Author:
Y. Ohishi
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