Fabrication of thin film solar cell materials by APCVD

Abstract

Thin film solar cells are currently being implemented commercially as they reduce the amount of semiconductor material required for each cell when compared to silicon wafers, thereby lowering the cost of production. Currently two direct band gap chalcogenide thin-film technologies, CdTe and CuInGa(S,Se)₂ (CIGS), yield the highest reported power conversion efficiencies of 16.5% and 20.3%, respectively. In addition, Cu₂ZnSnS₄ (CZTS) is one of the most promising chalcogenide thin film photovoltaic absorber materials; with an optimal band gap of about 1.5 eV. More importantly, CZTS consists of abundant and non-toxic elements, so research on CZTS thin-film solar cells has been increasing significantly in recent years. Moreover, Sb₂S₃ based chalcogenide thin films have been proposed for use in photovoltaic applications.
The preparation of chalcogenide thin films solar cells commonly use physical vapour deposition methods including thermal/e-beam evaporation, sputtering, and pulsed laser deposition, electrochemical deposition, spray pyrolysis, solution-based synthesis, followed by the sulfurization or selenization annealing process. In this paper, we report a non-vacuum process, using atmospheric pressure chemical vapour deposition (APCVD), to fabricate chalcogenide thin film solar cell materials as well as transparent conductive oxide (TCO) thin films. The optical, electrical, and structural properties of these materials were characterized by UV-VIS-NIR, four-point probes, SEM, EDX, XRD, Micro-Raman.

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Identifiers

ORCID for C.C. Huang: orcid.org/0000-0003-3471-2463

ORCID for D.W. Hewak: orcid.org/0000-0002-2093-5773

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