Thermally stable low current consuming gallium and germanium chalcogenides for consumer and automotive memory applications
Thermally stable low current consuming gallium and germanium chalcogenides for consumer and automotive memory applications
The phase change technology behind rewritable optical disks and the latest generation of electronic memories has provided clear commercial and technological advances for the field of data storage, by virtue of the many well known attributes, in particular scaling, cycling endurance and speed, that chalcogenide materials offer. While the switching power and current consumption of established germanium antimony telluride based memory cells are a major factor in chip design in real world applications, often the thermal stability of the device can be a major obstacle in the path to the full commercialisation. In this work we describe our research in material discovery and characterization for the purpose of identifying more thermally stable chalcogenides for applications in PCRAM.
Hewak, Daniel
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Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Gholipour, Behrad
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Knight, Kenton
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Guerin, S.
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Hayden, Brian
aea74f68-2264-4487-9d84-5b12ddbbb331
Purdy, G.
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2011
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Knight, Kenton
7f4a1bf9-9bb2-4cab-b8f8-55696f58884b
Guerin, S.
e185e0c2-85c6-4d1c-a2cf-cd2f410d346f
Hayden, Brian
aea74f68-2264-4487-9d84-5b12ddbbb331
Purdy, G.
d05164e9-57c6-40e9-a270-603fcfcff0b8
Hewak, Daniel, Huang, Chung-Che, Gholipour, Behrad, Knight, Kenton, Guerin, S., Hayden, Brian and Purdy, G.
(2011)
Thermally stable low current consuming gallium and germanium chalcogenides for consumer and automotive memory applications.
European Symposium on Phase Change and Ovonic Science (E/PCOS 2011), Zurich, Switzerland.
04 - 06 Sep 2011.
Record type:
Conference or Workshop Item
(Paper)
Abstract
The phase change technology behind rewritable optical disks and the latest generation of electronic memories has provided clear commercial and technological advances for the field of data storage, by virtue of the many well known attributes, in particular scaling, cycling endurance and speed, that chalcogenide materials offer. While the switching power and current consumption of established germanium antimony telluride based memory cells are a major factor in chip design in real world applications, often the thermal stability of the device can be a major obstacle in the path to the full commercialisation. In this work we describe our research in material discovery and characterization for the purpose of identifying more thermally stable chalcogenides for applications in PCRAM.
More information
e-pub ahead of print date: 2011
Published date: 2011
Venue - Dates:
European Symposium on Phase Change and Ovonic Science (E/PCOS 2011), Zurich, Switzerland, 2011-09-04 - 2011-09-06
Organisations:
Faculty of Natural and Environmental Sciences, Optoelectronics Research Centre, Electrochemistry
Identifiers
Local EPrints ID: 341342
URI: http://eprints.soton.ac.uk/id/eprint/341342
PURE UUID: 6ec7ee39-3d51-4509-ab5d-0dbb72166e1d
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Date deposited: 20 Jul 2012 10:15
Last modified: 15 Mar 2024 03:23
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Contributors
Author:
Chung-Che Huang
Author:
Behrad Gholipour
Author:
Kenton Knight
Author:
S. Guerin
Author:
G. Purdy
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