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Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications

Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
This paper describes a systematic approach to analyze the simultaneous impact of various reactant
plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties. Particular
emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film.
Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the
RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized
plasma condition, staggered bottom-gate TFTs were fabricated and its electrical characteristics
were measured.
0167-9317
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Clark, Owain D.
5508f8b4-d370-42f0-8db6-59e50d15bcc6
Ben Masaud, Taha
931dee8c-d8ac-4519-96ff-fa0813b4da59
Fang, Qi
36daae0c-85c4-4efa-9043-a09ae3757a85
Gunn, Robert
6492aa2c-1754-405e-ac62-0eedf0ed1757
Hakim, M. M. A.
a3ec2cf3-d89c-4ec5-a66f-e718fba3a52d
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, Harold M H
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Clark, Owain D.
5508f8b4-d370-42f0-8db6-59e50d15bcc6
Ben Masaud, Taha
931dee8c-d8ac-4519-96ff-fa0813b4da59
Fang, Qi
36daae0c-85c4-4efa-9043-a09ae3757a85
Gunn, Robert
6492aa2c-1754-405e-ac62-0eedf0ed1757
Hakim, M. M. A.
a3ec2cf3-d89c-4ec5-a66f-e718fba3a52d
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, Harold M H
795aa67f-29e5-480f-b1bc-9bd5c0d558e1

Mohamed Sultan, Suhana, Clark, Owain D., Ben Masaud, Taha, Fang, Qi, Gunn, Robert, Hakim, M. M. A., Sun, Kai, Ashburn, Peter and Chong, Harold M H (2012) Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications. Microelectronic Engineering.

Record type: Article

Abstract

This paper describes a systematic approach to analyze the simultaneous impact of various reactant
plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties. Particular
emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film.
Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the
RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized
plasma condition, staggered bottom-gate TFTs were fabricated and its electrical characteristics
were measured.

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Published date: September 2012
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 341558
URI: https://eprints.soton.ac.uk/id/eprint/341558
ISSN: 0167-9317
PURE UUID: 71b60ea7-b240-4c89-a66f-ddea23199163
ORCID for Harold M H Chong: ORCID iD orcid.org/0000-0002-7110-5761

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Date deposited: 27 Jul 2012 08:28
Last modified: 29 Aug 2019 00:40

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