Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
This paper describes a systematic approach to analyze the simultaneous impact of various reactant plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties. Particular emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film. Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized plasma condition, staggered bottom-gate TFTs were fabricated and its electrical characteristics were measured.
162-165
Sultan, S.M.
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Clark, O.D.
5508f8b4-d370-42f0-8db6-59e50d15bcc6
Masaud, T.B.
931dee8c-d8ac-4519-96ff-fa0813b4da59
Fang, Q.
36daae0c-85c4-4efa-9043-a09ae3757a85
Gunn, R.
6492aa2c-1754-405e-ac62-0eedf0ed1757
Hakim, M.M.A.
a3ec2cf3-d89c-4ec5-a66f-e718fba3a52d
Sun, K.
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, H.M.H
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
1 September 2012
Sultan, S.M.
f789d611-a667-4d61-82b8-3902158b29c2
Clark, O.D.
5508f8b4-d370-42f0-8db6-59e50d15bcc6
Masaud, T.B.
931dee8c-d8ac-4519-96ff-fa0813b4da59
Fang, Q.
36daae0c-85c4-4efa-9043-a09ae3757a85
Gunn, R.
6492aa2c-1754-405e-ac62-0eedf0ed1757
Hakim, M.M.A.
a3ec2cf3-d89c-4ec5-a66f-e718fba3a52d
Sun, K.
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, H.M.H
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Sultan, S.M., Clark, O.D., Masaud, T.B., Fang, Q., Gunn, R., Hakim, M.M.A., Sun, K., Ashburn, P. and Chong, H.M.H
(2012)
Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications.
Microelectronic Engineering, .
(doi:10.1016/j.mee.2012.04.019).
Abstract
This paper describes a systematic approach to analyze the simultaneous impact of various reactant plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties. Particular emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film. Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized plasma condition, staggered bottom-gate TFTs were fabricated and its electrical characteristics were measured.
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e-pub ahead of print date: 28 May 2012
Published date: 1 September 2012
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 341558
URI: http://eprints.soton.ac.uk/id/eprint/341558
ISSN: 0167-9317
PURE UUID: 71b60ea7-b240-4c89-a66f-ddea23199163
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Date deposited: 27 Jul 2012 08:28
Last modified: 15 Mar 2024 03:30
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Contributors
Author:
S.M. Sultan
Author:
O.D. Clark
Author:
T.B. Masaud
Author:
Q. Fang
Author:
R. Gunn
Author:
M.M.A. Hakim
Author:
H.M.H Chong
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