Focused Ion Beam Milling of Exfoliated Graphene for Prototyping of Electronic Devices
Focused Ion Beam Milling of Exfoliated Graphene for Prototyping of Electronic Devices
We demonstrate a focused ion beam (FIB) prototyping technique that accurately aligns a two terminal contact structure to exfoliated graphene. Alignment accuracy of better than 250nm has been achieved without direct FIB imaging of the graphene. In situ deposited tungsten is used to contact the graphene channel and the measured channel resistance is 58 kohm.
Schmidt, Marek E.
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Johari, Zaharah
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Ismail, Razali
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Mizuta, Hiroshi
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Chong, Harold M H
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Schmidt, Marek E.
e4489af8-f4ff-4e8d-b7d2-8ca34cb51445
Johari, Zaharah
92de9070-186a-4ea7-bbeb-373a570ea0d3
Ismail, Razali
930921ee-1916-4fe1-80ef-75789a99c18a
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Chong, Harold M H
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Schmidt, Marek E., Johari, Zaharah, Ismail, Razali, Mizuta, Hiroshi and Chong, Harold M H
(2012)
Focused Ion Beam Milling of Exfoliated Graphene for Prototyping of Electronic Devices.
Microelectronic Engineering.
(In Press)
Abstract
We demonstrate a focused ion beam (FIB) prototyping technique that accurately aligns a two terminal contact structure to exfoliated graphene. Alignment accuracy of better than 250nm has been achieved without direct FIB imaging of the graphene. In situ deposited tungsten is used to contact the graphene channel and the measured channel resistance is 58 kohm.
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More information
Accepted/In Press date: 2012
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 341561
URI: http://eprints.soton.ac.uk/id/eprint/341561
ISSN: 0167-9317
PURE UUID: e1c578b2-3e0b-463d-b059-ad7a625ac420
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Date deposited: 27 Jul 2012 08:34
Last modified: 11 Dec 2021 04:18
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Contributors
Author:
Marek E. Schmidt
Author:
Zaharah Johari
Author:
Razali Ismail
Author:
Hiroshi Mizuta
Author:
Harold M H Chong
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