Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure
Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure
We present a hybrid waveguide-based optical switch using n-ZnO/p-Si heterojunction diode structure. The n-ZnO/p-Si vertical diode is incorporated with a Fabry-Perot microcavity to realize optical switching through electrical biasing. The ZnO layer functions as n-type transparent oxide semiconductor and waveguide cladding. Under 4V reverse bias(depletion), simulation shows a modulation depth of 5.54dB and tunable red-shift of 4nm over a cavity length of 17µm. A Fabry-Perot microcavity of 20µm length has been fabricated and measurement shows a tunable blue-shift of 0.1nm under 10V forward bias condition (accumulation).
Ben Masaud, Taha
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Jaberansary, Ehsan
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Mohamed Sultan, Suhana
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Clark, Owain D.
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Sharp, Thomas
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Gunn, Robert
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Bagnall, Darren M
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Chong, Harold M H
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4 October 2012
Ben Masaud, Taha
931dee8c-d8ac-4519-96ff-fa0813b4da59
Jaberansary, Ehsan
98dd5166-5fbf-4d84-b08f-82d3c5bc4184
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Clark, Owain D.
5508f8b4-d370-42f0-8db6-59e50d15bcc6
Sharp, Thomas
7f6cbe09-3d04-4d52-9199-db5f2fa154ed
Gunn, Robert
6492aa2c-1754-405e-ac62-0eedf0ed1757
Bagnall, Darren M
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Chong, Harold M H
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ben Masaud, Taha, Jaberansary, Ehsan, Mohamed Sultan, Suhana, Clark, Owain D., Sharp, Thomas, Gunn, Robert, Bagnall, Darren M and Chong, Harold M H
(2012)
Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure.
IEEE Nano 2012 12th International Conference on Nanotechnology, , Birmingham, United Kingdom.
20 - 23 Aug 2012.
(doi:10.1109/NANO.2012.6322085).
Record type:
Conference or Workshop Item
(Paper)
Abstract
We present a hybrid waveguide-based optical switch using n-ZnO/p-Si heterojunction diode structure. The n-ZnO/p-Si vertical diode is incorporated with a Fabry-Perot microcavity to realize optical switching through electrical biasing. The ZnO layer functions as n-type transparent oxide semiconductor and waveguide cladding. Under 4V reverse bias(depletion), simulation shows a modulation depth of 5.54dB and tunable red-shift of 4nm over a cavity length of 17µm. A Fabry-Perot microcavity of 20µm length has been fabricated and measurement shows a tunable blue-shift of 0.1nm under 10V forward bias condition (accumulation).
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Submitted date: August 2012
e-pub ahead of print date: 4 October 2012
Published date: 4 October 2012
Venue - Dates:
IEEE Nano 2012 12th International Conference on Nanotechnology, , Birmingham, United Kingdom, 2012-08-20 - 2012-08-23
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 341565
URI: http://eprints.soton.ac.uk/id/eprint/341565
PURE UUID: 19e23a9a-1dae-40eb-8745-339d3d649c90
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Date deposited: 27 Jul 2012 08:47
Last modified: 15 Mar 2024 03:30
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Contributors
Author:
Taha Ben Masaud
Author:
Ehsan Jaberansary
Author:
Suhana Mohamed Sultan
Author:
Owain D. Clark
Author:
Thomas Sharp
Author:
Robert Gunn
Author:
Darren M Bagnall
Author:
Harold M H Chong
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