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Top-down fabricated ZnO nanowire transistors for application in biosensors

Top-down fabricated ZnO nanowire transistors for application in biosensors
Top-down fabricated ZnO nanowire transistors for application in biosensors
Top-down ZnO nanowire FETs have been fabricated using mature photolithography, ZnO atomic layer deposition (ALD) and plasma etching. This paper investigates the effects of oxygen adsorption by measuring FET characteristics at different gate bias sweep rates and by characterizing hysteresis effects. Unpassivated devices exhibit a low threshold voltage shift of 5.4 V when the gate bias sweep rate is varied from 2500 V/s to 1.2 V/s and a low hysteresis width of less than 1.5 V. These results are considerably better than the state of the art for bottom-up as-fabricated ZnO nanowire FETs and demonstrate the suitability of this top-down technology for biosensor applications.
IEEE
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
de Planque, Maurits R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, Harold M H
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
de Planque, Maurits R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, Harold M H
795aa67f-29e5-480f-b1bc-9bd5c0d558e1

Mohamed Sultan, Suhana, Sun, Kai, de Planque, Maurits R.R., Ashburn, Peter and Chong, Harold M H (2012) Top-down fabricated ZnO nanowire transistors for application in biosensors. In 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC). IEEE.. (doi:10.1109/ESSDERC.2012.6343352).

Record type: Conference or Workshop Item (Paper)

Abstract

Top-down ZnO nanowire FETs have been fabricated using mature photolithography, ZnO atomic layer deposition (ALD) and plasma etching. This paper investigates the effects of oxygen adsorption by measuring FET characteristics at different gate bias sweep rates and by characterizing hysteresis effects. Unpassivated devices exhibit a low threshold voltage shift of 5.4 V when the gate bias sweep rate is varied from 2500 V/s to 1.2 V/s and a low hysteresis width of less than 1.5 V. These results are considerably better than the state of the art for bottom-up as-fabricated ZnO nanowire FETs and demonstrate the suitability of this top-down technology for biosensor applications.

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Published date: September 2012
Venue - Dates: ESSDERC 2012 42nd European Solid-State Device Research Conference, France, 2012-09-17 - 2012-09-21
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 341567
URI: https://eprints.soton.ac.uk/id/eprint/341567
PURE UUID: ae345748-3b0f-4b53-aa6b-e6c502e35dcd
ORCID for Maurits R.R. de Planque: ORCID iD orcid.org/0000-0002-8787-0513
ORCID for Harold M H Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 27 Jul 2012 08:56
Last modified: 20 Jul 2019 00:51

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Contributors

Author: Suhana Mohamed Sultan
Author: Kai Sun
Author: Peter Ashburn

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