Fabrication of low loss coplanar waveguides on gold-doped Czochralski-silicon
Fabrication of low loss coplanar waveguides on gold-doped Czochralski-silicon
Coplanar waveguides fabricated on gold-doped Czochralski-silicon show reduced losses. Gold atoms implanted into silicon substrates compensate for background free carriers introduced by impurities in the material. This leads to an increased silicon resistivity which exhibits lower microwave absorption. High frequency measurements in 1-40 GHz range of coplanar waveguides fabricated on gold-doped silicon show attenuation reductions up to 70%, highlighting the benefits of deep level compensation of shallow level impurities in silicon using gold.
9780819486578
806811
SPIE - The International Society for Optical Engineering
Abuelgasim, A.
eaa5e29e-510d-45e4-a724-d7f69c05f853
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
de Groot, C. H.
92cd2e02-fcc4-43da-8816-c86f966be90c
2011
Abuelgasim, A.
eaa5e29e-510d-45e4-a724-d7f69c05f853
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
de Groot, C. H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Abuelgasim, A., Mallik, Kanad, Ashburn, P. and de Groot, C. H.
(2011)
Fabrication of low loss coplanar waveguides on gold-doped Czochralski-silicon.
In Bioelectronics, Biomedical, and Bioinspired Systems V; and Nanotechnology V.
SPIE - The International Society for Optical Engineering.
.
(doi:10.1117/12.886552).
Record type:
Conference or Workshop Item
(Paper)
Abstract
Coplanar waveguides fabricated on gold-doped Czochralski-silicon show reduced losses. Gold atoms implanted into silicon substrates compensate for background free carriers introduced by impurities in the material. This leads to an increased silicon resistivity which exhibits lower microwave absorption. High frequency measurements in 1-40 GHz range of coplanar waveguides fabricated on gold-doped silicon show attenuation reductions up to 70%, highlighting the benefits of deep level compensation of shallow level impurities in silicon using gold.
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Published date: 2011
Venue - Dates:
Bioelectronics, Biomedical, and Bioinspired Systems V; and Nanotechnology V, Praha, Czech Republic, 2011-04-18 - 2011-04-20
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 341783
URI: http://eprints.soton.ac.uk/id/eprint/341783
ISBN: 9780819486578
PURE UUID: e444af29-d0c9-4bd6-83b5-13f641621413
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Date deposited: 08 Aug 2012 08:19
Last modified: 15 Mar 2024 03:11
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Contributors
Author:
A. Abuelgasim
Author:
Kanad Mallik
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