The University of Southampton
University of Southampton Institutional Repository

Aerosol-assisted chemical vapor deposition of transparent conductive gallium-indium-oxide films

Aerosol-assisted chemical vapor deposition of transparent conductive gallium-indium-oxide films
Aerosol-assisted chemical vapor deposition of transparent conductive gallium-indium-oxide films
Aerosol assisted chemical vapor deposition (AACVD) reactions of GaMe3, InMe3, and 6 equiv of the donor functionalized alcohol, HOCH2CH2OMe, in toluene resulted in the deposition of colorless, transparent gallium-indium-oxide films at a range of temperatures (350-450 C). The gallium-indium-oxide films were analyzed by a range of techniques including scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), glancing- angle X-ray powder diffraction (XRD), and wavelength dispersive analysis of X-rays (WDX). The optimum growth temperature was found to be 450 C, which produced transparent films with a composition of Ga0.6In1.4O3 as determined by WDX. XPS confirmed the presence of indium, gallium, and oxygen in the films. Annealing these films at 1000 C resulted in crystalline films, and glancing-angle powder XRD showed a gallium-substituted cubic In2O3 lattice was adopted with a lattice parameter, a = 9.84 Å. AFM showed that the annealed films on quartz had a root-mean-square roughness of 94-200 nm, and the work function was measured to be 4.6 eV. The four point probe method was used to determine a sheet resistivity, Rs = 83.3 Ω/square, and a low electrical resistivity value (for example 6.66 x10-4 Ω cm in 80 nm sample thickness, as determined by side-on SEM for films deposited on glass).
gallium indium oxide, transparent conducting oxide, thin film AACVD
0897-4756
1719-1726
Knapp, Caroline E.
ec1f0e71-d87e-432c-ab0b-4cc8376db7f8
Hyett, Geoffrey
4f292fc9-2198-4b18-99b9-3c74e7dfed8d
Parkin, Ivan P.
7f95b9c4-1f9d-441c-8d43-ac8ea2554b85
Carmalt, Claire J.
eb7d35e3-cde5-46c7-a6ee-5951c374923c
Knapp, Caroline E.
ec1f0e71-d87e-432c-ab0b-4cc8376db7f8
Hyett, Geoffrey
4f292fc9-2198-4b18-99b9-3c74e7dfed8d
Parkin, Ivan P.
7f95b9c4-1f9d-441c-8d43-ac8ea2554b85
Carmalt, Claire J.
eb7d35e3-cde5-46c7-a6ee-5951c374923c

Knapp, Caroline E., Hyett, Geoffrey, Parkin, Ivan P. and Carmalt, Claire J. (2011) Aerosol-assisted chemical vapor deposition of transparent conductive gallium-indium-oxide films. Chemistry of Materials, 23 (7), 1719-1726. (doi:10.1021/cm102292b).

Record type: Article

Abstract

Aerosol assisted chemical vapor deposition (AACVD) reactions of GaMe3, InMe3, and 6 equiv of the donor functionalized alcohol, HOCH2CH2OMe, in toluene resulted in the deposition of colorless, transparent gallium-indium-oxide films at a range of temperatures (350-450 C). The gallium-indium-oxide films were analyzed by a range of techniques including scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), glancing- angle X-ray powder diffraction (XRD), and wavelength dispersive analysis of X-rays (WDX). The optimum growth temperature was found to be 450 C, which produced transparent films with a composition of Ga0.6In1.4O3 as determined by WDX. XPS confirmed the presence of indium, gallium, and oxygen in the films. Annealing these films at 1000 C resulted in crystalline films, and glancing-angle powder XRD showed a gallium-substituted cubic In2O3 lattice was adopted with a lattice parameter, a = 9.84 Å. AFM showed that the annealed films on quartz had a root-mean-square roughness of 94-200 nm, and the work function was measured to be 4.6 eV. The four point probe method was used to determine a sheet resistivity, Rs = 83.3 Ω/square, and a low electrical resistivity value (for example 6.66 x10-4 Ω cm in 80 nm sample thickness, as determined by side-on SEM for films deposited on glass).

Text
cm102292b.pdf - Version of Record
Restricted to Repository staff only
Request a copy

More information

Published date: 21 March 2011
Keywords: gallium indium oxide, transparent conducting oxide, thin film AACVD
Organisations: Chemistry

Identifiers

Local EPrints ID: 342676
URI: http://eprints.soton.ac.uk/id/eprint/342676
ISSN: 0897-4756
PURE UUID: 80deb2e0-26ca-437b-8f4a-8a32a9954187
ORCID for Geoffrey Hyett: ORCID iD orcid.org/0000-0001-9302-9723

Catalogue record

Date deposited: 12 Sep 2012 11:18
Last modified: 26 Nov 2019 01:36

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×