Aerosol-assisted chemical vapor deposition of transparent conductive gallium-indium-oxide films

Abstract

Aerosol assisted chemical vapor deposition (AACVD) reactions of GaMe3, InMe3, and 6 equiv of the donor functionalized alcohol, HOCH2CH2OMe, in toluene resulted in the deposition of colorless, transparent gallium-indium-oxide films at a range of temperatures (350-450 C). The gallium-indium-oxide films were analyzed by a range of techniques including scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), glancing- angle X-ray powder diffraction (XRD), and wavelength dispersive analysis of X-rays (WDX). The optimum growth temperature was found to be 450 C, which produced transparent films with a composition of Ga0.6In1.4O3 as determined by WDX. XPS confirmed the presence of indium, gallium, and oxygen in the films. Annealing these films at 1000 C resulted in crystalline films, and glancing-angle powder XRD showed a gallium-substituted cubic In2O3 lattice was adopted with a lattice parameter, a = 9.84 Å. AFM showed that the annealed films on quartz had a root-mean-square roughness of 94-200 nm, and the work function was measured to be 4.6 eV. The four point probe method was used to determine a sheet resistivity, Rs = 83.3 Ω/square, and a low electrical resistivity value (for example 6.66 x10-4 Ω cm in 80 nm sample thickness, as determined by side-on SEM for films deposited on glass).

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ORCID for Geoffrey Hyett: orcid.org/0000-0001-9302-9723

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