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Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers

Orava, J., Greer, A.L., Gholipour, B., Hewak, D.W. and Smith, C.E. (2012) Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers Applied Physics Letters, 101, (9) (doi:10.1063/1.4748881).

Record type: Article


Phase changes in chalcogenides such as Ge2Sb2Te5 can be exploited in non-volatile random-access memory, with fast crystallization crucial for device operation. Ultra-fast differential scanning calorimetry, heating at rates up to 40,000K s-1, has been used to study the crystallization of amorphous Ge2Sb2Te5 with and without sandwich layers of ZnS-SiO2. At heating rates up to 1000K s-1, the sandwich layers retard crystallization, an effect attributed to crystallization-induced stress. At greater heating rates (>or = 5000K s-1), and consequently higher crystallization temperatures, the stress is relaxed, and sandwich layers catalyze crystallization. Implications for memory-device performance are discussed.

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Published date: 28 August 2012
Keywords: antimony compounds, calorimetry, catalysis, chalcogenide glasses, crystallisation, dielectric materials, differential scanning calorimetry, germanium compounds, heat treatment, II-VI semiconductors, phase change materials, random-access storage, silicon compounds, tellurium compounds, zinc compounds
Organisations: Optoelectronics Research Centre


Local EPrints ID: 343087
ISSN: 0003-6951
PURE UUID: d5ecb74d-4310-43d7-b6d0-32c9f1ca48cb
ORCID for D.W. Hewak: ORCID iD

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Date deposited: 24 Sep 2012 11:07
Last modified: 18 Jul 2017 05:24

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Author: J. Orava
Author: A.L. Greer
Author: B. Gholipour
Author: D.W. Hewak ORCID iD
Author: C.E. Smith

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