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Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers

Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers
Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers
Phase changes in chalcogenides such as Ge2Sb2Te5 can be exploited in non-volatile random-access memory, with fast crystallization crucial for device operation. Ultra-fast differential scanning calorimetry, heating at rates up to 40,000K s-1, has been used to study the crystallization of amorphous Ge2Sb2Te5 with and without sandwich layers of ZnS-SiO2. At heating rates up to 1000K s-1, the sandwich layers retard crystallization, an effect attributed to crystallization-induced stress. At greater heating rates (>or = 5000K s-1), and consequently higher crystallization temperatures, the stress is relaxed, and sandwich layers catalyze crystallization. Implications for memory-device performance are discussed.
antimony compounds, calorimetry, catalysis, chalcogenide glasses, crystallisation, dielectric materials, differential scanning calorimetry, germanium compounds, heat treatment, II-VI semiconductors, phase change materials, random-access storage, silicon compounds, tellurium compounds, zinc compounds
0003-6951
Orava, J.
757b3128-2bda-4282-8317-a10f44f779f2
Greer, A.L.
cea505bd-de1d-4a03-9871-bdd4386cb3a9
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Smith, C.E.
07421867-27eb-4b9b-b2fd-f6d64c27ef86
Orava, J.
757b3128-2bda-4282-8317-a10f44f779f2
Greer, A.L.
cea505bd-de1d-4a03-9871-bdd4386cb3a9
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Smith, C.E.
07421867-27eb-4b9b-b2fd-f6d64c27ef86

Orava, J., Greer, A.L., Gholipour, B., Hewak, D.W. and Smith, C.E. (2012) Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers. Applied Physics Letters, 101 (9), [91906]. (doi:10.1063/1.4748881).

Record type: Article

Abstract

Phase changes in chalcogenides such as Ge2Sb2Te5 can be exploited in non-volatile random-access memory, with fast crystallization crucial for device operation. Ultra-fast differential scanning calorimetry, heating at rates up to 40,000K s-1, has been used to study the crystallization of amorphous Ge2Sb2Te5 with and without sandwich layers of ZnS-SiO2. At heating rates up to 1000K s-1, the sandwich layers retard crystallization, an effect attributed to crystallization-induced stress. At greater heating rates (>or = 5000K s-1), and consequently higher crystallization temperatures, the stress is relaxed, and sandwich layers catalyze crystallization. Implications for memory-device performance are discussed.

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Published date: 28 August 2012
Keywords: antimony compounds, calorimetry, catalysis, chalcogenide glasses, crystallisation, dielectric materials, differential scanning calorimetry, germanium compounds, heat treatment, II-VI semiconductors, phase change materials, random-access storage, silicon compounds, tellurium compounds, zinc compounds
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 343087
URI: http://eprints.soton.ac.uk/id/eprint/343087
ISSN: 0003-6951
PURE UUID: d5ecb74d-4310-43d7-b6d0-32c9f1ca48cb
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

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Date deposited: 24 Sep 2012 11:07
Last modified: 26 Nov 2019 02:03

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