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Space charge and thickness dependent dc electrical breakdown of solid dielectrics

Space charge and thickness dependent dc electrical breakdown of solid dielectrics
Space charge and thickness dependent dc electrical breakdown of solid dielectrics
A new model based on space charge dynamics under very high dc electric field has been proposed to explain thickness dependent dielectric breakdown. Space charge phenomenon under high electric field has been studied for several decades thanks to the development of new charge mapping techniques. Overwhelming evidences show that the charge packet can be formed in the material under high electric field. The formation and dynamics of the charge packet will result in local electric field enhancement that has a direct impact on breakdown. It has been found that the key factors leading to the formation of charge packet are negative differential mobility and low trapping coefficient. Take these factors into the space charge based model, our simulation results clearly show that the breakdown is dependent on the sample thickness. Through the simulation, it has been noticed that the electrical breakdown field reduction depends on several parameters such as the onset of critical electric field when breakdown occurs. By varying the ramp rate of dc applied voltage, simulation has also shown that the breakdown strength increases with the voltage ramp rate
978-1-4673-4745-7
12-15
Institute of Electrical and Electronics Engineers
Chen, George
3de45a9c-6c9a-4bcb-90c3-d7e26be21819
Zhao, Junwei
b3fc6668-bcfd-4ba3-8c44-809cc7f26727
Chen, George
3de45a9c-6c9a-4bcb-90c3-d7e26be21819
Zhao, Junwei
b3fc6668-bcfd-4ba3-8c44-809cc7f26727

Chen, George and Zhao, Junwei (2012) Space charge and thickness dependent dc electrical breakdown of solid dielectrics. In Proceedings of 2012 International Conference on High Voltage Engineering and Application. Institute of Electrical and Electronics Engineers. pp. 12-15 .

Record type: Conference or Workshop Item (Paper)

Abstract

A new model based on space charge dynamics under very high dc electric field has been proposed to explain thickness dependent dielectric breakdown. Space charge phenomenon under high electric field has been studied for several decades thanks to the development of new charge mapping techniques. Overwhelming evidences show that the charge packet can be formed in the material under high electric field. The formation and dynamics of the charge packet will result in local electric field enhancement that has a direct impact on breakdown. It has been found that the key factors leading to the formation of charge packet are negative differential mobility and low trapping coefficient. Take these factors into the space charge based model, our simulation results clearly show that the breakdown is dependent on the sample thickness. Through the simulation, it has been noticed that the electrical breakdown field reduction depends on several parameters such as the onset of critical electric field when breakdown occurs. By varying the ramp rate of dc applied voltage, simulation has also shown that the breakdown strength increases with the voltage ramp rate

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More information

Published date: 17 September 2012
Venue - Dates: 2012 International Conference on High Voltage Engineering and Application, China, 2012-09-17
Organisations: EEE

Identifiers

Local EPrints ID: 343307
URI: https://eprints.soton.ac.uk/id/eprint/343307
ISBN: 978-1-4673-4745-7
PURE UUID: 6c819d9d-7a11-46ad-a6a2-e6e9340240e4

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Date deposited: 03 Oct 2012 11:19
Last modified: 28 Oct 2019 21:13

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