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Bipolar amplifier bias technique for robust IM3 null tracking independent of internal emitter resistance

Bipolar amplifier bias technique for robust IM3 null tracking independent of internal emitter resistance
Bipolar amplifier bias technique for robust IM3 null tracking independent of internal emitter resistance
Bipolar amplifiers can be biased to give a deep null in third order non-linearity, with the potential for high IP3 amplifier stages. This requires maintaining a precise voltage drop across a small resistive emitter degeneration resistance, whose value is related to kT=q. To make such a scheme practical, the bias must not only take into account the change in kT=q with temperature, but must compensate for variations in the degeneration resistance. In this paper we present a bias technique for IM3 null tracking that can take account of temperature and resistance tolerances, and is also insensitive to the value of the internal emitter resistance. Simulations using a 27 GHz BiCMOS technology indicate that the bias of an amplifier can be maintained over temperature, representative element tolerances, and mismatch such that the IP3 performance is maintained within ±9.5 dBV of the optimum null condition. The technique is applicable for a range of bipolar BiCMOS technologies and is attractive for amplifiers where high IP3 is required with moderate noise figure.
978-1-4673-2526-4
606-609
Balsom, Toby
154f9f90-47a9-4265-9f6d-46123a852ac9
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
Scott, Jonathan
a45fd676-58f3-47fc-b13f-80bc57175c1a
Balsom, Toby
154f9f90-47a9-4265-9f6d-46123a852ac9
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
Scott, Jonathan
a45fd676-58f3-47fc-b13f-80bc57175c1a

Balsom, Toby, Redman-White, William and Scott, Jonathan (2012) Bipolar amplifier bias technique for robust IM3 null tracking independent of internal emitter resistance. IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS) 2012, United States. 05 - 08 Aug 2012. pp. 606-609 . (doi:10.1109/MWSCAS.2012.6292093).

Record type: Conference or Workshop Item (Paper)

Abstract

Bipolar amplifiers can be biased to give a deep null in third order non-linearity, with the potential for high IP3 amplifier stages. This requires maintaining a precise voltage drop across a small resistive emitter degeneration resistance, whose value is related to kT=q. To make such a scheme practical, the bias must not only take into account the change in kT=q with temperature, but must compensate for variations in the degeneration resistance. In this paper we present a bias technique for IM3 null tracking that can take account of temperature and resistance tolerances, and is also insensitive to the value of the internal emitter resistance. Simulations using a 27 GHz BiCMOS technology indicate that the bias of an amplifier can be maintained over temperature, representative element tolerances, and mismatch such that the IP3 performance is maintained within ±9.5 dBV of the optimum null condition. The technique is applicable for a range of bipolar BiCMOS technologies and is attractive for amplifiers where high IP3 is required with moderate noise figure.

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More information

Published date: August 2012
Venue - Dates: IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS) 2012, United States, 2012-08-05 - 2012-08-08
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 343543
URI: https://eprints.soton.ac.uk/id/eprint/343543
ISBN: 978-1-4673-2526-4
PURE UUID: 1bff6086-2c56-4315-9e72-70e55374128d

Catalogue record

Date deposited: 04 Oct 2012 11:21
Last modified: 16 Jul 2019 21:52

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