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Realization of Al FinFET Single electron turnstile co-integrated with a close proximity electrometer SET

Realization of Al FinFET Single electron turnstile co-integrated with a close proximity electrometer SET
Realization of Al FinFET Single electron turnstile co-integrated with a close proximity electrometer SET
This paper presents a novel fabrication process to realize high density silicon based quantum dot devices with close proximity Al and Si gates on ultrathin silicon-on-insulator for spin qubit applications. Al FinFET gates surrounding a Si nanowire channel can adjust tunnelling barrier height electrically, while Si plunger side gates enable precise control of the quantum dots potential. This device is fabricated using a multi-layer electron beam lithography process that is fully compatible with metal oxide semiconductor technology. Low temperature electrical measurements and coulomb oscillation characteristics have demonstrated the capability of this structure to electrostatically define two coupled single electron transistors, one to be used as a turnstile device and the other as an electrometer.
0167-9317
Alkhalil, Feras
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Perez-Barraza, J.
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Husain, M. K.
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Lin, Y.
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Lambert, N.
3004fcf7-1a30-4b10-8024-e527eaddf160
Chong, H M H
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Tsuchiya, Y.
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Williams, D.
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Ferguson, A.
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Saito, Shinichi
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Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Alkhalil, Feras
69c44665-fdf5-4043-a47a-97578d9c31a1
Perez-Barraza, J.
62a794d1-1502-4735-8f04-36930ee740da
Husain, M. K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Lin, Y.
7086cb21-5f6b-48cc-add3-2efb33746dbf
Lambert, N.
3004fcf7-1a30-4b10-8024-e527eaddf160
Chong, H M H
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Williams, D.
bcbcd58d-a02f-414c-8d2a-b1b05fead720
Ferguson, A.
986dc4d4-2ca6-4d86-a9d2-c34d9390dee6
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9

Alkhalil, Feras, Perez-Barraza, J., Husain, M. K., Lin, Y., Lambert, N., Chong, H M H, Tsuchiya, Y., Williams, D., Ferguson, A., Saito, Shinichi and Mizuta, H. (2012) Realization of Al FinFET Single electron turnstile co-integrated with a close proximity electrometer SET. [in special issue: NanoDevices and NanoSystems] Microelectronic Engineering. (Submitted)

Record type: Article

Abstract

This paper presents a novel fabrication process to realize high density silicon based quantum dot devices with close proximity Al and Si gates on ultrathin silicon-on-insulator for spin qubit applications. Al FinFET gates surrounding a Si nanowire channel can adjust tunnelling barrier height electrically, while Si plunger side gates enable precise control of the quantum dots potential. This device is fabricated using a multi-layer electron beam lithography process that is fully compatible with metal oxide semiconductor technology. Low temperature electrical measurements and coulomb oscillation characteristics have demonstrated the capability of this structure to electrostatically define two coupled single electron transistors, one to be used as a turnstile device and the other as an electrometer.

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More information

Submitted date: October 2012
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 344185
URI: http://eprints.soton.ac.uk/id/eprint/344185
ISSN: 0167-9317
PURE UUID: b5ed9f6a-ec27-4fec-9521-8361cce92dae
ORCID for H M H Chong: ORCID iD orcid.org/0000-0002-7110-5761
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 11 Oct 2012 17:00
Last modified: 11 Dec 2021 04:38

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Contributors

Author: Feras Alkhalil
Author: J. Perez-Barraza
Author: M. K. Husain
Author: Y. Lin
Author: N. Lambert
Author: H M H Chong ORCID iD
Author: Y. Tsuchiya
Author: D. Williams
Author: A. Ferguson
Author: Shinichi Saito ORCID iD
Author: H. Mizuta

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