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Highly selective chemical vapor deposition of tin diselenide thin films onto patterned substrates via single source diselenoether precursors

Highly selective chemical vapor deposition of tin diselenide thin films onto patterned substrates via single source diselenoether precursors
Highly selective chemical vapor deposition of tin diselenide thin films onto patterned substrates via single source diselenoether precursors
The distorted octahedral complexes [SnCl4{nBuSe(CH2)nSenBu}]  (n = 2 or 3), (1) and (2), obtained from reaction of SnCl4 with the neutral bidentate ligands and characterized by IR/Raman and multinuclear (1H, 77Se{1H} and 119Sn) NMR spectroscopy and X-ray crystallography, serve as very effective single source precursors for low pressure chemical vapor deposition (LPCVD) of microcrystalline, single phase tin diselenide films onto SiO2, Si and TiN substrates. Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) imaging show hexagonal plate crystallites which grow perpendicular to the substrate surface in the thicker films, but align mostly parallel to the surface when the quantity of reagent is reduced to limit the film thickness. X-ray diffraction (XRD) and Raman spectroscopy on the deposited films are consistent with hexagonal SnSe2 (P3m1; a = b = 3.81 Å; c = 6.13 Å), with strong evidence for preferred orientation of the crystallites in thinner (0.5–2 µm) samples, consistent with crystal plate growth parallel to the substrate surface. Hall measurements show the deposited SnSe2 is a n-type semiconductor. The resistivity of the crystalline films is 210 (±10) mΩ cm and carrier density is 5.0 × 1018 cm–3. Very highly selective film growth from these reagents onto photolithographically patterned substrates is observed, with deposition strongly preferred onto the (conducting) TiN surfaces of SiO2/TiN patterned substrates, and onto the SiO2 surfaces of Si/SiO2 patterned substrates. A correlation between the high selectivity and high contact angle of a water droplet on the substrate surfaces is observed.
0897-4756
4442-4449
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Gurnani, Chitra
18063024-d052-4fe3-8a79-fdecd227bc2c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Jura, Marek
d145b3fa-eec4-47d8-b47c-61a2b616bc8f
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Gurnani, Chitra
18063024-d052-4fe3-8a79-fdecd227bc2c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Jura, Marek
d145b3fa-eec4-47d8-b47c-61a2b616bc8f
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037

de Groot, C.H., Gurnani, Chitra, Hector, Andrew L., Huang, Ruomeng, Jura, Marek, Levason, William and Reid, Gillian (2012) Highly selective chemical vapor deposition of tin diselenide thin films onto patterned substrates via single source diselenoether precursors. Chemistry of Materials, 22 (24), 4442-4449. (doi:10.1021/cm302864x).

Record type: Article

Abstract

The distorted octahedral complexes [SnCl4{nBuSe(CH2)nSenBu}]  (n = 2 or 3), (1) and (2), obtained from reaction of SnCl4 with the neutral bidentate ligands and characterized by IR/Raman and multinuclear (1H, 77Se{1H} and 119Sn) NMR spectroscopy and X-ray crystallography, serve as very effective single source precursors for low pressure chemical vapor deposition (LPCVD) of microcrystalline, single phase tin diselenide films onto SiO2, Si and TiN substrates. Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) imaging show hexagonal plate crystallites which grow perpendicular to the substrate surface in the thicker films, but align mostly parallel to the surface when the quantity of reagent is reduced to limit the film thickness. X-ray diffraction (XRD) and Raman spectroscopy on the deposited films are consistent with hexagonal SnSe2 (P3m1; a = b = 3.81 Å; c = 6.13 Å), with strong evidence for preferred orientation of the crystallites in thinner (0.5–2 µm) samples, consistent with crystal plate growth parallel to the substrate surface. Hall measurements show the deposited SnSe2 is a n-type semiconductor. The resistivity of the crystalline films is 210 (±10) mΩ cm and carrier density is 5.0 × 1018 cm–3. Very highly selective film growth from these reagents onto photolithographically patterned substrates is observed, with deposition strongly preferred onto the (conducting) TiN surfaces of SiO2/TiN patterned substrates, and onto the SiO2 surfaces of Si/SiO2 patterned substrates. A correlation between the high selectivity and high contact angle of a water droplet on the substrate surfaces is observed.

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Published date: 18 October 2012
Organisations: Chemistry, Electronics & Computer Science, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 345254
URI: https://eprints.soton.ac.uk/id/eprint/345254
ISSN: 0897-4756
PURE UUID: 07ffd337-95bc-4218-bc26-c4a1126300ba
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for William Levason: ORCID iD orcid.org/0000-0003-3540-0971
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468

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Date deposited: 14 Nov 2012 14:52
Last modified: 31 Jul 2019 00:54

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