Growth of PbSe quantum dots within high-index lead-phosphate glass for infrared saturable absorbers
Growth of PbSe quantum dots within high-index lead-phosphate glass for infrared saturable absorbers
PbSe quantum dots (QDs) were grown in high-refractive-index low-melting-temperature lead-phosphate glass. The lowest energy exciton transition of the QDs was tuned over a wide range within the infrared spectral region (0.93-2.75µm) by a controlled heat treatment. The measured QD radius ranged between 2 and 5.3nm, with a time (t) dependence of t0.29 for long dwelling times during the heat treatment, indicating that the QD growth mechanism tends to follow Lifshitz-Slyozov-Wagner theory. The QD saturable absorber behavior at 1.2µm had a measured saturation fluence of ~2.1µJ/cm2.
197-200
Pradeesh, Kannan
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Choudhary, Amol
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Mills, Benjamin
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Feng, Xian
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Shepherd, David P.
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16 October 2012
Pradeesh, Kannan
d264c1f5-cbaf-42ac-a939-10fce00fa5cb
Choudhary, Amol
a5540b54-f153-43e4-a59a-e3ed9360904b
Mills, Benjamin
05f1886e-96ef-420f-b856-4115f4ab36d0
Feng, Xian
b1a28be8-c603-4239-9c93-b2c14274e9c7
Shepherd, David P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Pradeesh, Kannan, Choudhary, Amol, Mills, Benjamin, Feng, Xian and Shepherd, David P.
(2012)
Growth of PbSe quantum dots within high-index lead-phosphate glass for infrared saturable absorbers.
Journal of the American Ceramic Society, 96 (1), .
(doi:10.1111/jace.12017).
Abstract
PbSe quantum dots (QDs) were grown in high-refractive-index low-melting-temperature lead-phosphate glass. The lowest energy exciton transition of the QDs was tuned over a wide range within the infrared spectral region (0.93-2.75µm) by a controlled heat treatment. The measured QD radius ranged between 2 and 5.3nm, with a time (t) dependence of t0.29 for long dwelling times during the heat treatment, indicating that the QD growth mechanism tends to follow Lifshitz-Slyozov-Wagner theory. The QD saturable absorber behavior at 1.2µm had a measured saturation fluence of ~2.1µJ/cm2.
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Published date: 16 October 2012
Organisations:
Optoelectronics Research Centre
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Local EPrints ID: 347647
URI: http://eprints.soton.ac.uk/id/eprint/347647
ISSN: 0002-7820
PURE UUID: 1c41c84f-846e-4ba5-8cd8-76874ec5571d
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Date deposited: 31 Jan 2013 13:31
Last modified: 15 Mar 2024 03:27
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Author:
Kannan Pradeesh
Author:
Amol Choudhary
Author:
Benjamin Mills
Author:
Xian Feng
Author:
David P. Shepherd
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