Design and simulation of zipping variable capacitors
Design and simulation of zipping variable capacitors
Variable capacitors are essential for building tunable RF systems. We present here the design and simulation of novel zipping variable capacitors with a high permittivity dielectric layer. Two modelling techniques are presented: finite element simulation and variational analysis. A capacitance ratio greater than 40 can be obtained for a 100µm x 25µm device which has a high permittivity dielectric layer (εr = 200). By shaping either the top electrode beam or the bottom electrode, continuously variable capacitance is achieved at low bias voltages.
zipper tunable capacitor, stable zipping, rf mems, high-k dielectric
147-150
Pu, S.H
49f83b8c-9c14-427f-8de3-44786dace734
Holmes, A.S.
08b7a295-d12e-4e18-97a9-f70a7bc9c5ba
Yeatman, E.M.
2146d398-e025-45fe-9f19-5b2d154fb63b
September 2007
Pu, S.H
49f83b8c-9c14-427f-8de3-44786dace734
Holmes, A.S.
08b7a295-d12e-4e18-97a9-f70a7bc9c5ba
Yeatman, E.M.
2146d398-e025-45fe-9f19-5b2d154fb63b
Pu, S.H, Holmes, A.S. and Yeatman, E.M.
(2007)
Design and simulation of zipping variable capacitors.
MicroMechanics Europe 2007, Guimaraes, Portugal.
16 - 18 Sep 2007.
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Variable capacitors are essential for building tunable RF systems. We present here the design and simulation of novel zipping variable capacitors with a high permittivity dielectric layer. Two modelling techniques are presented: finite element simulation and variational analysis. A capacitance ratio greater than 40 can be obtained for a 100µm x 25µm device which has a high permittivity dielectric layer (εr = 200). By shaping either the top electrode beam or the bottom electrode, continuously variable capacitance is achieved at low bias voltages.
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More information
Published date: September 2007
Venue - Dates:
MicroMechanics Europe 2007, Guimaraes, Portugal, 2007-09-16 - 2007-09-18
Keywords:
zipper tunable capacitor, stable zipping, rf mems, high-k dielectric
Organisations:
Electronics & Computer Science
Identifiers
Local EPrints ID: 347818
URI: http://eprints.soton.ac.uk/id/eprint/347818
PURE UUID: f6ddbac9-ac91-4ec9-9771-da3cd7b56429
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Date deposited: 30 Jan 2013 14:18
Last modified: 14 Mar 2024 12:52
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Contributors
Author:
S.H Pu
Author:
A.S. Holmes
Author:
E.M. Yeatman
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