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Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties

Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties
Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties
The effect of the femtosecond laser treatment of hydrogenated amorphous silicon (alpha-Si:H) films on their structural, optical, and photoelectric properties is studied. Under the experimental conditions applied in the study, laser treatment of the film with different radiation intensities induces structural changes that are nonuniform over the film surface. An increase in the radiation intensity yields an increase in the contribution of the nanocrystalline phase to the structure, averaged over the sample surface, as well as an increase in the conductance and photoconductance of the samples. At the same time, for all of the samples, the absorption spectrum obtained by the constant-photocurrent method has a shape typical for those of amorphous silicon. Obtained results indicate the possibility of alpha-Si:H films photoconductance increase by femtosecond pulse laser treatment.
1063-7826
749-754
Emelyanov, A.V.
1a2de0b0-3faa-4d4a-958a-0a678301df48
Kazanskii, A.G.
a123a8d5-67bb-47a4-88f4-76c949c5f792
Kashkarov, P.K.
4f541584-b577-4684-8cb1-cf5e918d6c62
Konkov, O.I.
67f155cc-270a-493a-9f1a-367b30ec518d
Terukov, E.I.
3e6d824e-86dc-497b-84ba-8cabb72fbef9
Forsh, P.A.
c2bb1dc8-3d86-444b-8ca4-1270971380f5
Khenkin, M.V.
301afb96-212e-471a-be48-f3c139500085
Kukin, A.V.
f68867e8-c0e0-4086-a3ff-ab6bf1b78bb9
Beresna, M.
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Kazansky, P.G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c
Emelyanov, A.V.
1a2de0b0-3faa-4d4a-958a-0a678301df48
Kazanskii, A.G.
a123a8d5-67bb-47a4-88f4-76c949c5f792
Kashkarov, P.K.
4f541584-b577-4684-8cb1-cf5e918d6c62
Konkov, O.I.
67f155cc-270a-493a-9f1a-367b30ec518d
Terukov, E.I.
3e6d824e-86dc-497b-84ba-8cabb72fbef9
Forsh, P.A.
c2bb1dc8-3d86-444b-8ca4-1270971380f5
Khenkin, M.V.
301afb96-212e-471a-be48-f3c139500085
Kukin, A.V.
f68867e8-c0e0-4086-a3ff-ab6bf1b78bb9
Beresna, M.
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Kazansky, P.G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c

Emelyanov, A.V., Kazanskii, A.G., Kashkarov, P.K., Konkov, O.I., Terukov, E.I., Forsh, P.A., Khenkin, M.V., Kukin, A.V., Beresna, M. and Kazansky, P.G. (2012) Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties. Semiconductors, 46 (6), 749-754. (doi:10.1134/S1063782612060097).

Record type: Article

Abstract

The effect of the femtosecond laser treatment of hydrogenated amorphous silicon (alpha-Si:H) films on their structural, optical, and photoelectric properties is studied. Under the experimental conditions applied in the study, laser treatment of the film with different radiation intensities induces structural changes that are nonuniform over the film surface. An increase in the radiation intensity yields an increase in the contribution of the nanocrystalline phase to the structure, averaged over the sample surface, as well as an increase in the conductance and photoconductance of the samples. At the same time, for all of the samples, the absorption spectrum obtained by the constant-photocurrent method has a shape typical for those of amorphous silicon. Obtained results indicate the possibility of alpha-Si:H films photoconductance increase by femtosecond pulse laser treatment.

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Published date: 2012
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 349961
URI: http://eprints.soton.ac.uk/id/eprint/349961
ISSN: 1063-7826
PURE UUID: 7537951c-f1cf-4424-8840-3b7a8865f524

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Date deposited: 15 Mar 2013 14:53
Last modified: 29 Jul 2019 16:31

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