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Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation

Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation
Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation
Visible luminescence is observed from the composite of SiO2 with embedded silicon nanocrystallites produced by femtosecond laser irradiation of hydrogenated amorphous silicon (a-Si:H) film in air. The photoluminescence originates from the defect states at the interface between silicon crystallites and SiO2 matrix. The method could be used for fabrication of luminescent layers to increase energy conversion of a-Si:H solar cells.
0003-6951
081902-[3 pages]
Emelyanov, Andrey V.
865c7992-f16b-4817-a4e3-ff95b31239b7
Kazanskii, Andrey G.
14a5eeab-a889-4cb6-8f66-e22967512252
Khenkin, Mark V.
4f85e0ee-b44b-44a6-b8f8-b05756155bb9
Forsh, Pavel A.
75b1b269-6a48-4c77-afb6-7ba7fc801734
Kashkarov, Pavel K.
14a22d9e-6d96-4386-a5c0-4f43adf76b1f
Gecevičius, Mindaugas
271576ee-dd9d-40b3-ab2f-19686b91dc64
Beresna, Martynas
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Kazansky, Peter G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c
Emelyanov, Andrey V.
865c7992-f16b-4817-a4e3-ff95b31239b7
Kazanskii, Andrey G.
14a5eeab-a889-4cb6-8f66-e22967512252
Khenkin, Mark V.
4f85e0ee-b44b-44a6-b8f8-b05756155bb9
Forsh, Pavel A.
75b1b269-6a48-4c77-afb6-7ba7fc801734
Kashkarov, Pavel K.
14a22d9e-6d96-4386-a5c0-4f43adf76b1f
Gecevičius, Mindaugas
271576ee-dd9d-40b3-ab2f-19686b91dc64
Beresna, Martynas
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Kazansky, Peter G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c

Emelyanov, Andrey V., Kazanskii, Andrey G., Khenkin, Mark V., Forsh, Pavel A., Kashkarov, Pavel K., Gecevičius, Mindaugas, Beresna, Martynas and Kazansky, Peter G. (2012) Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation. Applied Physics Letters, 101 (8), 081902-[3 pages]. (doi:10.1063/1.4747207).

Record type: Article

Abstract

Visible luminescence is observed from the composite of SiO2 with embedded silicon nanocrystallites produced by femtosecond laser irradiation of hydrogenated amorphous silicon (a-Si:H) film in air. The photoluminescence originates from the defect states at the interface between silicon crystallites and SiO2 matrix. The method could be used for fabrication of luminescent layers to increase energy conversion of a-Si:H solar cells.

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Published date: 2012
Organisations: Optoelectronics Research Centre
Learn more about Optoelectronics Research Centre research

Identifiers

Local EPrints ID: 350049
URI: http://eprints.soton.ac.uk/id/eprint/350049
DOI: doi:10.1063/1.4747207
ISSN: 0003-6951
PURE UUID: acf89185-1083-4ec0-9a94-8012c28c0a2c

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Date deposited: 15 Mar 2013 15:18
Last modified: 14 Mar 2024 13:20

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Contributors

Author: Andrey V. Emelyanov
Author: Andrey G. Kazanskii
Author: Mark V. Khenkin
Author: Pavel A. Forsh
Author: Pavel K. Kashkarov
Author: Mindaugas Gecevičius
Author: Martynas Beresna
Author: Peter G. Kazansky

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