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Non-aqueous electrodeposition of metals and metalloids from halometallate salts

Non-aqueous electrodeposition of metals and metalloids from halometallate salts
Non-aqueous electrodeposition of metals and metalloids from halometallate salts
A versatile electrochemical system for the non-aqueous electrodeposition of crystalline, oxide free p-block metals and metalloids is described, and it is demonstrated that by combining mixtures of these reagents, this system is suitable for electrodeposition of binary semiconductor alloys. The tetrabutylammonium halometallates, [NnBu4][InCl4], [NnBu4][SbCl4], [NnBu4][BiCl4], [NnBu4]2[SeCl6] and [NnBu4]2[TeCl6], are readily dissolved in CH2Cl2 and form reproducible electrochemical systems with good stability in the presence of a [NnBu4]Cl supporting electrolyte. The prepared electrolytes show a wide potential window and the electrodeposition of indium, antimony, bismuth, tellurium and selenium on glassy carbon and titanium nitride electrodes has been demonstrated. The deposited elements were characterised by scanning electron microscopy, energy dispersive X-ray analysis and powder X-ray diffraction. The compatibility of the reagents permits the preparation of a single electrolyte containing several halometallate species which allows the electrodeposition of binary materials, as is demonstrated for InSb. This room temperature, ‘bottom-up’ electrochemical approach should thus be suitable for the one-pot deposition of a wide range of compound semiconductor materials.
2046-2069
15645-15654
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Cook, David A.
0fca0ffb-eef4-422f-b513-ce9a1f7de7cc
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Jolleys, Andrew
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Kissling, Gabriela P.
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Pearce, Stuart
1d0ee7c5-8f72-4783-a034-9b2f67de3531
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Cook, David A.
0fca0ffb-eef4-422f-b513-ce9a1f7de7cc
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Jolleys, Andrew
29e25ac4-2ff1-4267-8278-a433a94d5c6f
Kissling, Gabriela P.
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Pearce, Stuart
1d0ee7c5-8f72-4783-a034-9b2f67de3531
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037

Bartlett, Philip N., Cook, David A., de Groot, C.H., Hector, Andrew L., Huang, Ruomeng, Jolleys, Andrew, Kissling, Gabriela P., Levason, William, Pearce, Stuart and Reid, Gillian (2013) Non-aqueous electrodeposition of metals and metalloids from halometallate salts. RSC Advances, 3 (36), 15645-15654.

Record type: Article

Abstract

A versatile electrochemical system for the non-aqueous electrodeposition of crystalline, oxide free p-block metals and metalloids is described, and it is demonstrated that by combining mixtures of these reagents, this system is suitable for electrodeposition of binary semiconductor alloys. The tetrabutylammonium halometallates, [NnBu4][InCl4], [NnBu4][SbCl4], [NnBu4][BiCl4], [NnBu4]2[SeCl6] and [NnBu4]2[TeCl6], are readily dissolved in CH2Cl2 and form reproducible electrochemical systems with good stability in the presence of a [NnBu4]Cl supporting electrolyte. The prepared electrolytes show a wide potential window and the electrodeposition of indium, antimony, bismuth, tellurium and selenium on glassy carbon and titanium nitride electrodes has been demonstrated. The deposited elements were characterised by scanning electron microscopy, energy dispersive X-ray analysis and powder X-ray diffraction. The compatibility of the reagents permits the preparation of a single electrolyte containing several halometallate species which allows the electrodeposition of binary materials, as is demonstrated for InSb. This room temperature, ‘bottom-up’ electrochemical approach should thus be suitable for the one-pot deposition of a wide range of compound semiconductor materials.

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More information

e-pub ahead of print date: 4 July 2013
Published date: 28 September 2013
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 350305
URI: https://eprints.soton.ac.uk/id/eprint/350305
ISSN: 2046-2069
PURE UUID: d74414eb-dc0b-4cba-8ff0-49953e9e76f7
ORCID for Philip N. Bartlett: ORCID iD orcid.org/0000-0002-7300-6900
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for Gabriela P. Kissling: ORCID iD orcid.org/0000-0003-4701-7160
ORCID for William Levason: ORCID iD orcid.org/0000-0003-3540-0971
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468

Catalogue record

Date deposited: 25 Mar 2013 11:55
Last modified: 14 Jul 2018 00:37

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Contributors

Author: David A. Cook
Author: C.H. de Groot ORCID iD
Author: Ruomeng Huang
Author: Andrew Jolleys
Author: William Levason ORCID iD
Author: Stuart Pearce
Author: Gillian Reid ORCID iD

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