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A dual-gate graphene FET model for circuit simulation - SPICE implementation

A dual-gate graphene FET model for circuit simulation - SPICE implementation
A dual-gate graphene FET model for circuit simulation - SPICE implementation
This paper presents a SPICE compatible model of a dual-gate bilayer graphene field effect transistor (GFET). The model describes the functionality of the transistor in all the regions of operation for both hole and electron conduction. We present closed form analytical equations that define the boundary points between the regions to ensure Jacobian continuity for efficient circuit simulator implementation. A saturation displacement current is proposed to model the drain current when the channel becomes ambipolar. The model proposes a quantum capacitance that varies with the surface potential. The model has been implemented in Berkeley SPICE-3 and it shows a good agreement against experimental data with the NRMS error less than 10%
427-435
Umoh, Ime
2faec90d-20fc-4cf8-9595-f40e7c0f5cc6
Kazmierski, Tomasz
a97d7958-40c3-413f-924d-84545216092a
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d
Umoh, Ime
2faec90d-20fc-4cf8-9595-f40e7c0f5cc6
Kazmierski, Tomasz
a97d7958-40c3-413f-924d-84545216092a
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d

Umoh, Ime, Kazmierski, Tomasz and Al-Hashimi, Bashir (2013) A dual-gate graphene FET model for circuit simulation - SPICE implementation. IEEE Transactions on Nanotechnology, 12 (3), 427-435. (doi:10.1109/TNANO.2013.2253490).

Record type: Article

Abstract

This paper presents a SPICE compatible model of a dual-gate bilayer graphene field effect transistor (GFET). The model describes the functionality of the transistor in all the regions of operation for both hole and electron conduction. We present closed form analytical equations that define the boundary points between the regions to ensure Jacobian continuity for efficient circuit simulator implementation. A saturation displacement current is proposed to model the drain current when the channel becomes ambipolar. The model proposes a quantum capacitance that varies with the surface potential. The model has been implemented in Berkeley SPICE-3 and it shows a good agreement against experimental data with the NRMS error less than 10%

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e-pub ahead of print date: 20 March 2013
Published date: 6 May 2013
Organisations: Nanoelectronics and Nanotechnology, EEE

Identifiers

Local EPrints ID: 350383
URI: https://eprints.soton.ac.uk/id/eprint/350383
PURE UUID: 22790e02-1bb4-4ec7-b350-e32ca78b33ee

Catalogue record

Date deposited: 26 Mar 2013 10:16
Last modified: 28 Aug 2019 18:54

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Contributors

Author: Ime Umoh
Author: Tomasz Kazmierski
Author: Bashir Al-Hashimi

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