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Realization of Al tri-gate single electron turnstile co-integrated with a close proximity electrometer SET

Realization of Al tri-gate single electron turnstile co-integrated with a close proximity electrometer SET
Realization of Al tri-gate single electron turnstile co-integrated with a close proximity electrometer SET
This paper presents a novel fabrication process to realize high density silicon based quantum dot devices with close proximity Al and Si gates on ultrathin silicon-on-insulator for spin qubit applications. Al gates surrounding a Si nanowire channel can adjust tunnelling barrier height electrically, while Si plunger side gates enable precise control of the quantum dots potential. This device is fabricated using a multi-layer electron beam lithography process that is fully compatible with metal oxide semiconductor technology. Low temperature electrical measurements and Coulomb oscillation characteristics have demonstrated the capability of this structure to electrostatically define two coupled single electron transistors, one to be used as a turnstile device and the other as an electrometer.
si quantum dot, al tri-gate structure, si plunger gates, coulomb blockade oscillations, electrometer, si spin qubits
0167-9317
64-67
Alkhalil, Feras M.
7065cea9-bb52-4c44-90bb-8ef2a76ca092
Perez-Barraza, Julia I.
eae3fa08-d07f-4da0-887f-81c4ef24ff7b
Husain, Muhammad K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Lin, Yun P.
70f79161-19fd-4376-9198-d6d04d2bb873
Lambert, Nick
2862301e-491a-4c5c-aff5-96d1e8b909ee
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Williams, David A.
094ce3d7-eb21-4c00-98b3-27d956747a60
Ferguson, Andrew J.
03668abb-3d1a-4fa8-bcec-649cea834c7b
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Alkhalil, Feras M.
7065cea9-bb52-4c44-90bb-8ef2a76ca092
Perez-Barraza, Julia I.
eae3fa08-d07f-4da0-887f-81c4ef24ff7b
Husain, Muhammad K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Lin, Yun P.
70f79161-19fd-4376-9198-d6d04d2bb873
Lambert, Nick
2862301e-491a-4c5c-aff5-96d1e8b909ee
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Williams, David A.
094ce3d7-eb21-4c00-98b3-27d956747a60
Ferguson, Andrew J.
03668abb-3d1a-4fa8-bcec-649cea834c7b
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Alkhalil, Feras M., Perez-Barraza, Julia I., Husain, Muhammad K., Lin, Yun P., Lambert, Nick, Chong, Harold M.H., Tsuchiya, Yoshishige, Williams, David A., Ferguson, Andrew J., Saito, Shinichi and Mizuta, Hiroshi (2013) Realization of Al tri-gate single electron turnstile co-integrated with a close proximity electrometer SET. Microelectronic Engineering, 111, 64-67. (doi:10.1016/j.mee.2013.02.007).

Record type: Article

Abstract

This paper presents a novel fabrication process to realize high density silicon based quantum dot devices with close proximity Al and Si gates on ultrathin silicon-on-insulator for spin qubit applications. Al gates surrounding a Si nanowire channel can adjust tunnelling barrier height electrically, while Si plunger side gates enable precise control of the quantum dots potential. This device is fabricated using a multi-layer electron beam lithography process that is fully compatible with metal oxide semiconductor technology. Low temperature electrical measurements and Coulomb oscillation characteristics have demonstrated the capability of this structure to electrostatically define two coupled single electron transistors, one to be used as a turnstile device and the other as an electrometer.

Full text not available from this repository.

More information

e-pub ahead of print date: 13 February 2013
Published date: November 2013
Keywords: si quantum dot, al tri-gate structure, si plunger gates, coulomb blockade oscillations, electrometer, si spin qubits
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 350797
URI: http://eprints.soton.ac.uk/id/eprint/350797
ISSN: 0167-9317
PURE UUID: f38f4500-3e9f-4bec-a544-de9b1c51adb7
ORCID for Harold M.H. Chong: ORCID iD orcid.org/0000-0002-7110-5761
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 05 Apr 2013 16:21
Last modified: 07 Oct 2020 06:56

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