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Effect of mobile ionic-charge on CMOS based ion-sensitive field-effect transistors (ISFETs)

Effect of mobile ionic-charge on CMOS based ion-sensitive field-effect transistors (ISFETs)
Effect of mobile ionic-charge on CMOS based ion-sensitive field-effect transistors (ISFETs)
This work is an investigation on the large threshold voltage variation exhibited in CMOS based ISFETs. This irregularity is thoroughly examined and is identified to be caused by mobile ionic charge that is induced in the sensing membrane when the membrane is in contact with the ionic-solution. This auxiliary charge increments the effective capacitance of the sensing membrane, causing irregular shifts in the characteristics of the devices. Several methods for overcoming this issue are addressed.
cmos, isfet, chemical sensor, drift, mobile ionic charge, threshold variation, trapped charge
978-1-4244-3828-0
2165-2168
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Georgiou, P.
3caf7479-7f5a-46ec-8e3c-ef04d0528caf
Michelakis, K.
ea581b11-2706-421d-88a2-f710075c9e25
Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Georgiou, P.
3caf7479-7f5a-46ec-8e3c-ef04d0528caf
Michelakis, K.
ea581b11-2706-421d-88a2-f710075c9e25
Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6

Prodromakis, T., Georgiou, P., Michelakis, K. and Toumazou, C. (2009) Effect of mobile ionic-charge on CMOS based ion-sensitive field-effect transistors (ISFETs). At IEEE International Symposium on Circuits and Systems, 2009 IEEE International Symposium on Circuits and Systems, 2009, Taiwan, Province of China. 24 - 27 May 2009. pp. 2165-2168. (doi:10.1109/ISCAS.2009.5118225).

Record type: Conference or Workshop Item (Paper)

Abstract

This work is an investigation on the large threshold voltage variation exhibited in CMOS based ISFETs. This irregularity is thoroughly examined and is identified to be caused by mobile ionic charge that is induced in the sensing membrane when the membrane is in contact with the ionic-solution. This auxiliary charge increments the effective capacitance of the sensing membrane, causing irregular shifts in the characteristics of the devices. Several methods for overcoming this issue are addressed.

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More information

Published date: May 2009
Venue - Dates: IEEE International Symposium on Circuits and Systems, 2009, Taiwan, Province of China, 2009-05-24 - 2009-05-27
Keywords: cmos, isfet, chemical sensor, drift, mobile ionic charge, threshold variation, trapped charge
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 351529
URI: https://eprints.soton.ac.uk/id/eprint/351529
ISBN: 978-1-4244-3828-0
PURE UUID: 5773799c-3c3f-4e18-9c8d-d5698d7d9484
ORCID for T. Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 23 Apr 2013 13:52
Last modified: 06 Jun 2018 12:24

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Contributors

Author: T. Prodromakis ORCID iD
Author: P. Georgiou
Author: K. Michelakis
Author: C. Toumazou

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