Switching mechanisms in microscale memristors
Switching mechanisms in microscale memristors
It is only very recently that the memristor, the fourth missing passive element, was discovered, as technological advances and the scaling-down to nanometre dimensions in particular resulted in clearly evident and measurable memristance. At the nanoscale, these devices exhibit variable resistive behaviour, which can be applied in switching networks and memory. Experimental evidence is provided that micrometre-size memristors are viable with practical ROFF/RON ratios.
63-65
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Michelakis, K.
ea581b11-2706-421d-88a2-f710075c9e25
Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6
7 January 2010
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Michelakis, K.
ea581b11-2706-421d-88a2-f710075c9e25
Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6
Prodromakis, T., Michelakis, K. and Toumazou, C.
(2010)
Switching mechanisms in microscale memristors.
Electronics Letters, 46 (1), .
(doi:10.1049/el.2010.2716).
Abstract
It is only very recently that the memristor, the fourth missing passive element, was discovered, as technological advances and the scaling-down to nanometre dimensions in particular resulted in clearly evident and measurable memristance. At the nanoscale, these devices exhibit variable resistive behaviour, which can be applied in switching networks and memory. Experimental evidence is provided that micrometre-size memristors are viable with practical ROFF/RON ratios.
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Published date: 7 January 2010
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 351532
URI: http://eprints.soton.ac.uk/id/eprint/351532
ISSN: 0013-5194
PURE UUID: d0625781-bd2e-4960-982b-b57cc662f9f3
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Date deposited: 23 Apr 2013 14:16
Last modified: 14 Mar 2024 13:40
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Author:
T. Prodromakis
Author:
K. Michelakis
Author:
C. Toumazou
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