An extended CMOS ISFET model incorporating the physical design geometry and the effects on performance and offset variation

Liu, Yan, Georgiou, Pantelis, Prodromakis, Themistoklis, Constandinou, Timothy G and Toumazou, Christofer (2011) An extended CMOS ISFET model incorporating the physical design geometry and the effects on performance and offset variation. IEEE Transactions on Electron Devices, 58 (12), 4414-4422. (doi:10.1109/TED.2011.2168821).

Abstract

This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and measured characteristics by taking into account the effects of nonidealities such as threshold voltage variation and sensor noise. The model is evaluated through a number of devices with varying design parameters (chemical sensing area and MOSFET dimensions) fabricated in a commercially available 0.35-µm CMOS technology. Threshold voltage, subthreshold slope, chemical sensitivity, drift, and noise were measured and compared with the simulated results. The first- and second-order effects are analyzed in detail, and it is shown that the sensors' performance was in agreement with the proposed model.

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Contributors

Author: Themistoklis Prodromakis

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