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An extended CMOS ISFET model incorporating the physical design geometry and the effects on performance and offset variation

An extended CMOS ISFET model incorporating the physical design geometry and the effects on performance and offset variation
An extended CMOS ISFET model incorporating the physical design geometry and the effects on performance and offset variation
This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and measured characteristics by taking into account the effects of nonidealities such as threshold voltage variation and sensor noise. The model is evaluated through a number of devices with varying design parameters (chemical sensing area and MOSFET dimensions) fabricated in a commercially available 0.35-?m CMOS technology. Threshold voltage, subthreshold slope, chemical sensitivity, drift, and noise were measured and compared with the simulated results. The first- and second-order effects are analyzed in detail, and it is shown that the sensors' performance was in agreement with the proposed model.
4414-4422
Liu, Yan
3d2550f3-df3b-46fd-a49e-511f7abe6424
Georgiou, Pantelis
90e3a373-77ee-4621-b65d-3f47e3b7895c
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Constandinou, Timothy G
a0abf730-58db-47c0-b7c6-a3b170f08d1a
Toumazou, Christofer
7a856162-f970-4ef4-8a57-5822d8a69281
Liu, Yan
3d2550f3-df3b-46fd-a49e-511f7abe6424
Georgiou, Pantelis
90e3a373-77ee-4621-b65d-3f47e3b7895c
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Constandinou, Timothy G
a0abf730-58db-47c0-b7c6-a3b170f08d1a
Toumazou, Christofer
7a856162-f970-4ef4-8a57-5822d8a69281

Liu, Yan, Georgiou, Pantelis, Prodromakis, Themistoklis, Constandinou, Timothy G and Toumazou, Christofer (2011) An extended CMOS ISFET model incorporating the physical design geometry and the effects on performance and offset variation IEEE Transactions on Electron Devices, 58, (12), pp. 4414-4422. (doi:10.1109/TED.2011.2168821).

Record type: Article

Abstract

This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and measured characteristics by taking into account the effects of nonidealities such as threshold voltage variation and sensor noise. The model is evaluated through a number of devices with varying design parameters (chemical sensing area and MOSFET dimensions) fabricated in a commercially available 0.35-?m CMOS technology. Threshold voltage, subthreshold slope, chemical sensitivity, drift, and noise were measured and compared with the simulated results. The first- and second-order effects are analyzed in detail, and it is shown that the sensors' performance was in agreement with the proposed model.

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Published date: 2011
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 351534
URI: http://eprints.soton.ac.uk/id/eprint/351534
PURE UUID: af6345a5-5159-4e18-b448-d34fc0b694f5

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Date deposited: 23 Apr 2013 14:05
Last modified: 18 Jul 2017 04:25

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Contributors

Author: Yan Liu
Author: Pantelis Georgiou
Author: Timothy G Constandinou
Author: Christofer Toumazou

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