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Memristive devices as parameter setting elements in programmable gain amplifiers

Memristive devices as parameter setting elements in programmable gain amplifiers
Memristive devices as parameter setting elements in programmable gain amplifiers
In this paper, we investigate the AC performance of a variable gain amplifier that utilizes an in-house manufactured memristor as a gain setting element. Analysis includes frequency and phase responses as the memristor is programmed at different resistive states. A TiO2-based solid-state memristor was employed in the feedback branch of an inverting voltage amplifier and was programmed externally. We have also observed indications of memcapacitive effects and a correlation with resistive states is presented. We demonstrate that our TiO2 memristive devices, although possessing relatively low ROFF/RON switching ratios (~10), are versatile and can be used reliably in programmable gain amplifiers.&more...
0003-6951
243502-[3 pages]
Berdan, R.
082f1f5b-eaee-48a6-b728-414fc65f72bd
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6
Berdan, R.
082f1f5b-eaee-48a6-b728-414fc65f72bd
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6

Berdan, R., Prodromakis, T., Salaoru, I., Khiat, A. and Toumazou, C. (2012) Memristive devices as parameter setting elements in programmable gain amplifiers. Applied Physics Letters, 101 (24), 243502-[3 pages]. (doi:10.1063/1.4770315).

Record type: Article

Abstract

In this paper, we investigate the AC performance of a variable gain amplifier that utilizes an in-house manufactured memristor as a gain setting element. Analysis includes frequency and phase responses as the memristor is programmed at different resistive states. A TiO2-based solid-state memristor was employed in the feedback branch of an inverting voltage amplifier and was programmed externally. We have also observed indications of memcapacitive effects and a correlation with resistive states is presented. We demonstrate that our TiO2 memristive devices, although possessing relatively low ROFF/RON switching ratios (~10), are versatile and can be used reliably in programmable gain amplifiers.&more...

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More information

Published date: 2012
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 351536
URI: http://eprints.soton.ac.uk/id/eprint/351536
DOI: doi:10.1063/1.4770315
ISSN: 0003-6951
PURE UUID: c9e94457-2ec0-4c59-88cb-521440073851
ORCID for T. Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 23 Apr 2013 10:56
Last modified: 14 Mar 2024 13:40

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Contributors

Author: R. Berdan
Author: T. Prodromakis ORCID iD
Author: I. Salaoru
Author: A. Khiat
Author: C. Toumazou

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