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Memristive devices as parameter setting elements in programmable gain amplifiers

Memristive devices as parameter setting elements in programmable gain amplifiers
Memristive devices as parameter setting elements in programmable gain amplifiers
In this paper, we investigate the AC performance of a variable gain amplifier that utilizes an in-house manufactured memristor as a gain setting element. Analysis includes frequency and phase responses as the memristor is programmed at different resistive states. A TiO2-based solid-state memristor was employed in the feedback branch of an inverting voltage amplifier and was programmed externally. We have also observed indications of memcapacitive effects and a correlation with resistive states is presented. We demonstrate that our TiO2 memristive devices, although possessing relatively low ROFF/RON switching ratios (?10), are versatile and can be used reliably in programmable gain amplifiers.
0003-6951
243502-[3 pages]
Berdan, R.
082f1f5b-eaee-48a6-b728-414fc65f72bd
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Khiat, A.
ee593dd6-9654-4680-b602-28ac8b93086d
Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6
Berdan, R.
082f1f5b-eaee-48a6-b728-414fc65f72bd
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Khiat, A.
ee593dd6-9654-4680-b602-28ac8b93086d
Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6

Berdan, R., Prodromakis, T., Salaoru, I., Khiat, A. and Toumazou, C. (2012) Memristive devices as parameter setting elements in programmable gain amplifiers. Applied Physics Letters, 101 (24), 243502-[3 pages].

Record type: Article

Abstract

In this paper, we investigate the AC performance of a variable gain amplifier that utilizes an in-house manufactured memristor as a gain setting element. Analysis includes frequency and phase responses as the memristor is programmed at different resistive states. A TiO2-based solid-state memristor was employed in the feedback branch of an inverting voltage amplifier and was programmed externally. We have also observed indications of memcapacitive effects and a correlation with resistive states is presented. We demonstrate that our TiO2 memristive devices, although possessing relatively low ROFF/RON switching ratios (?10), are versatile and can be used reliably in programmable gain amplifiers.

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More information

Published date: 2012
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 351536
URI: https://eprints.soton.ac.uk/id/eprint/351536
ISSN: 0003-6951
PURE UUID: c9e94457-2ec0-4c59-88cb-521440073851

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Date deposited: 23 Apr 2013 10:56
Last modified: 16 Oct 2017 01:37

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Contributors

Author: R. Berdan
Author: T. Prodromakis
Author: I. Salaoru
Author: A. Khiat
Author: C. Toumazou

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