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Cost-effective fabrication of nanoscale electrode memristors with reproducible electrical response

Cost-effective fabrication of nanoscale electrode memristors with reproducible electrical response
Cost-effective fabrication of nanoscale electrode memristors with reproducible electrical response
This Letter aims to promote basic research into memristors, which will help provide theorists with much-needed reliable benchmarks and will also aid the technology progress. It addresses an information gap presently in the literature on simple microfabrication techniques for the realisation of such devices. Consequently, a fabrication method is reported for implementing the full active-material stack, requiring a single lithography and evaporation step. A cost-effective technique that can reliably shrink device lateral dimensions towards the nanoscale is also demonstrated. Experimental results confirm the suitability of the proposed methods for fabricating memristors of varying dimensions that exhibit consistent electrical characteristics.
1750-0443
91-94
Michelakis, K.
ea581b11-2706-421d-88a2-f710075c9e25
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6
Michelakis, K.
ea581b11-2706-421d-88a2-f710075c9e25
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6

Michelakis, K., Prodromakis, T. and Toumazou, C. (2010) Cost-effective fabrication of nanoscale electrode memristors with reproducible electrical response. Micro & Nano Letters, 5 (2), 91-94. (doi:10.1049/mnl.2009.0106).

Record type: Article

Abstract

This Letter aims to promote basic research into memristors, which will help provide theorists with much-needed reliable benchmarks and will also aid the technology progress. It addresses an information gap presently in the literature on simple microfabrication techniques for the realisation of such devices. Consequently, a fabrication method is reported for implementing the full active-material stack, requiring a single lithography and evaporation step. A cost-effective technique that can reliably shrink device lateral dimensions towards the nanoscale is also demonstrated. Experimental results confirm the suitability of the proposed methods for fabricating memristors of varying dimensions that exhibit consistent electrical characteristics.

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More information

Published date: April 2010
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 351537
URI: https://eprints.soton.ac.uk/id/eprint/351537
ISSN: 1750-0443
PURE UUID: 0ea11967-5a72-4661-9319-12e5ea520837

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Date deposited: 23 Apr 2013 14:24
Last modified: 18 Jul 2017 04:25

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Contributors

Author: K. Michelakis
Author: T. Prodromakis
Author: C. Toumazou

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