High precision analogue memristor state tuning
High precision analogue memristor state tuning
A report is presented on the operation of an analogue programming circuit for accurately setting the state of a memristor. The circuit exploits the dynamic modulation of resistance under a constant DC bias while real-time measurements of the memristance are performed using an AC signal. The circuit employs feedback for converging the state of a device at any required level within a decade. This allows the memristor to act as an analogue potentiometer, with its resistance corresponding to an input analogue voltage. This implementation was tested with the HP memristor model revealing an accuracy of less than 0.4% (8 bit precision) in relation to the full dynamic range.
1105-1107
Berdan, R.
082f1f5b-eaee-48a6-b728-414fc65f72bd
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6
2012
Berdan, R.
082f1f5b-eaee-48a6-b728-414fc65f72bd
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6
Berdan, R., Prodromakis, T. and Toumazou, C.
(2012)
High precision analogue memristor state tuning.
Electronics Letters, 48 (18), .
(doi:10.1049/el.2012.2295).
Abstract
A report is presented on the operation of an analogue programming circuit for accurately setting the state of a memristor. The circuit exploits the dynamic modulation of resistance under a constant DC bias while real-time measurements of the memristance are performed using an AC signal. The circuit employs feedback for converging the state of a device at any required level within a decade. This allows the memristor to act as an analogue potentiometer, with its resistance corresponding to an input analogue voltage. This implementation was tested with the HP memristor model revealing an accuracy of less than 0.4% (8 bit precision) in relation to the full dynamic range.
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Published date: 2012
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 351538
URI: http://eprints.soton.ac.uk/id/eprint/351538
ISSN: 0013-5194
PURE UUID: 7bc0d1f4-be4e-44ae-954e-dcd636f6d3a3
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Date deposited: 23 Apr 2013 10:35
Last modified: 14 Mar 2024 13:41
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Contributors
Author:
R. Berdan
Author:
T. Prodromakis
Author:
C. Toumazou
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