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Surface texturing for Maxwell-Wagner polarisation engineering

Surface texturing for Maxwell-Wagner polarisation engineering
Surface texturing for Maxwell-Wagner polarisation engineering
Surface texturing techniques that are applied in laminar structures to extend the supported Maxwell–Wagner polarisation are described. The roughness of the semiconductor surface is increased, resulting in a subdivision of the large Si–SiO2 interfaces to a multitude of small interfaces. Measured results demonstrate that this surface texturing has a direct effect on the relaxation of the Maxwell–Wagner polarisation and, in particular, at the interfacial to atomic polarisation transition.
1750-0443
5-8
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Papavassiliou, C.
5faf408a-ca30-47e5-8283-4a65536f91ff
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Papavassiliou, C.
5faf408a-ca30-47e5-8283-4a65536f91ff

Prodromakis, T. and Papavassiliou, C. (2009) Surface texturing for Maxwell-Wagner polarisation engineering. Micro & Nano Letters, 4 (1), 5-8. (doi:10.1049/mnl:20080049).

Record type: Article

Abstract

Surface texturing techniques that are applied in laminar structures to extend the supported Maxwell–Wagner polarisation are described. The roughness of the semiconductor surface is increased, resulting in a subdivision of the large Si–SiO2 interfaces to a multitude of small interfaces. Measured results demonstrate that this surface texturing has a direct effect on the relaxation of the Maxwell–Wagner polarisation and, in particular, at the interfacial to atomic polarisation transition.

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More information

Published date: 2009
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 351545
URI: https://eprints.soton.ac.uk/id/eprint/351545
ISSN: 1750-0443
PURE UUID: 7dd91871-044d-4382-b6ff-6347243dbe03
ORCID for T. Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 23 Apr 2013 14:31
Last modified: 06 Jun 2018 12:24

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Contributors

Author: T. Prodromakis ORCID iD
Author: C. Papavassiliou

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