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Modelling of current percolation channels in emerging resistive switching elements

Modelling of current percolation channels in emerging resistive switching elements
Modelling of current percolation channels in emerging resistive switching elements
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory elements. Identifying the vital physical mechanisms behind resistive switching can enable these devices to be utilized more efficiently, reliably and in the long-term. In this paper, we present a new approach for analysing resistive switching by modelling the active core of two terminal devices as 2D and 3D grid circuit breaker networks. This model is employed to demonstrate that substantial resistive switching can only be supported by the formation of continuous current percolation channels, while multi-state capacity is ascribed to the establishment and annihilation of multiple channels.
1-5
Shihong, Marcus Wu
ca222279-1de1-407b-b9df-9f0a33443619
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Salaoru, Iulia
bfec063f-78ec-471f-8139-eb4e4787fb21
Toumazou, Christofer
7a856162-f970-4ef4-8a57-5822d8a69281
Shihong, Marcus Wu
ca222279-1de1-407b-b9df-9f0a33443619
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Salaoru, Iulia
bfec063f-78ec-471f-8139-eb4e4787fb21
Toumazou, Christofer
7a856162-f970-4ef4-8a57-5822d8a69281

Shihong, Marcus Wu, Prodromakis, Themistoklis, Salaoru, Iulia and Toumazou, Christofer (2012) Modelling of current percolation channels in emerging resistive switching elements. Pre-print, 1-5.

Record type: Article

Abstract

Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory elements. Identifying the vital physical mechanisms behind resistive switching can enable these devices to be utilized more efficiently, reliably and in the long-term. In this paper, we present a new approach for analysing resistive switching by modelling the active core of two terminal devices as 2D and 3D grid circuit breaker networks. This model is employed to demonstrate that substantial resistive switching can only be supported by the formation of continuous current percolation channels, while multi-state capacity is ascribed to the establishment and annihilation of multiple channels.

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More information

Published date: 13 June 2012
Additional Information: arxiv.org/ftp/arxiv/papers/1206/1206.2746.pdf
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 351552
URI: https://eprints.soton.ac.uk/id/eprint/351552
PURE UUID: 3aaad6b6-61e0-4b2a-9f51-344aadefd7a5

Catalogue record

Date deposited: 25 Apr 2013 14:27
Last modified: 18 Jul 2017 04:25

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Contributors

Author: Marcus Wu Shihong
Author: Iulia Salaoru
Author: Christofer Toumazou

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