Stretchable array of ISFET devices for applications in biomedical imagers
Stretchable array of ISFET devices for applications in biomedical imagers
Technologies for rendering of 2D arrays of ISFET (Ion Sensitive FET) devices into stretchable and biocompatible systems with applications in biomedical imagers are presented. Rigid silicon segments containing the ISFET devices are mechanically and electrically connected through flexible parylene beams with embedded metal tracks for signal and power distribution. Key in this technology is the use of biocompatible parylene polymer both as a structural element for the stretchable-interconnect beams, as well as for the overall system encapsulation. Local laser ablation of the parylene coating is successfully applied on the fabricated ISFET devices to expose the ion-sensitive ISFET gates resulting in a leakage current in the nA range. The ISFET devices are fabricated using a custom 2 µm CMOS process. ISFETS are processed successfully side by side with CMOS devices to verify their compatibility.
Zoumpoulidis, T.
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Prodromakis, T.
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van Zeijl, H.
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Michelakis, K.
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Bartek, M.
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Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6
Dekkerz, R.
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26 October 2009
Zoumpoulidis, T.
a6c6038a-f2a0-480d-aac3-357893b69e03
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
van Zeijl, H.
1d8f3ea7-903d-4809-b7d8-71afcb82125b
Michelakis, K.
ea581b11-2706-421d-88a2-f710075c9e25
Bartek, M.
ae5897ff-2765-4e26-8d63-b3cb0af22c06
Toumazou, C.
52728165-8fe5-4c54-9fad-e9ccc4423dd6
Dekkerz, R.
ed2abea9-7313-4172-a8e0-d0258f95c551
Zoumpoulidis, T., Prodromakis, T., van Zeijl, H., Michelakis, K., Bartek, M., Toumazou, C. and Dekkerz, R.
(2009)
Stretchable array of ISFET devices for applications in biomedical imagers.
2009 IEEE Sensors, Christchurch, New Zealand.
24 - 28 Oct 2009.
Record type:
Conference or Workshop Item
(Other)
Abstract
Technologies for rendering of 2D arrays of ISFET (Ion Sensitive FET) devices into stretchable and biocompatible systems with applications in biomedical imagers are presented. Rigid silicon segments containing the ISFET devices are mechanically and electrically connected through flexible parylene beams with embedded metal tracks for signal and power distribution. Key in this technology is the use of biocompatible parylene polymer both as a structural element for the stretchable-interconnect beams, as well as for the overall system encapsulation. Local laser ablation of the parylene coating is successfully applied on the fabricated ISFET devices to expose the ion-sensitive ISFET gates resulting in a leakage current in the nA range. The ISFET devices are fabricated using a custom 2 µm CMOS process. ISFETS are processed successfully side by side with CMOS devices to verify their compatibility.
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Published date: 26 October 2009
Venue - Dates:
2009 IEEE Sensors, Christchurch, New Zealand, 2009-10-24 - 2009-10-28
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 351555
URI: http://eprints.soton.ac.uk/id/eprint/351555
PURE UUID: d8e1ed8f-4338-4980-9351-ca994aa5066b
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Date deposited: 29 Apr 2013 08:36
Last modified: 09 Jan 2022 03:44
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Contributors
Author:
T. Zoumpoulidis
Author:
T. Prodromakis
Author:
H. van Zeijl
Author:
K. Michelakis
Author:
M. Bartek
Author:
C. Toumazou
Author:
R. Dekkerz
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