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A versatile memristor model with nonlinear dopant kinetics

A versatile memristor model with nonlinear dopant kinetics
A versatile memristor model with nonlinear dopant kinetics
The need for reliable models that take into account the nonlinear kinetics of dopants is nowadays of paramount importance, particularly with the physical dimensions of electron devices shrinking to the deep nanoscale range and the development of emerging nanoionic systems such as the memristor. In this paper, we present a novel nonlinear dopant drift model that resolves the boundary issues existing in previously reported models that can be easily adjusted to match the dynamics of distinct memristive elements. With the aid of this model, we examine switching mechanisms, current-voltage characteristics, and the collective ion transport in two terminal memristive devices, providing new insights on memristive behavior.
memristive devices, memristor, memristor model, nonlinear dopant kinetics
3099-3105
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Peh, Boon Pin
16fa6737-2fcc-453a-83a3-1cabc1b9f6f1
Papavassiliou, Christos
e51de0f1-db39-4e1f-ac66-8e10a2d282b9
Toumazou, Christofer
7a856162-f970-4ef4-8a57-5822d8a69281
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Peh, Boon Pin
16fa6737-2fcc-453a-83a3-1cabc1b9f6f1
Papavassiliou, Christos
e51de0f1-db39-4e1f-ac66-8e10a2d282b9
Toumazou, Christofer
7a856162-f970-4ef4-8a57-5822d8a69281

Prodromakis, Themistoklis, Peh, Boon Pin, Papavassiliou, Christos and Toumazou, Christofer (2011) A versatile memristor model with nonlinear dopant kinetics. IEEE Transactions on Electron Devices, 58 (9), 3099-3105. (doi:10.1109/TED.2011.2158004).

Record type: Article

Abstract

The need for reliable models that take into account the nonlinear kinetics of dopants is nowadays of paramount importance, particularly with the physical dimensions of electron devices shrinking to the deep nanoscale range and the development of emerging nanoionic systems such as the memristor. In this paper, we present a novel nonlinear dopant drift model that resolves the boundary issues existing in previously reported models that can be easily adjusted to match the dynamics of distinct memristive elements. With the aid of this model, we examine switching mechanisms, current-voltage characteristics, and the collective ion transport in two terminal memristive devices, providing new insights on memristive behavior.

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More information

e-pub ahead of print date: 27 June 2011
Published date: 22 August 2011
Keywords: memristive devices, memristor, memristor model, nonlinear dopant kinetics
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 351568
URI: https://eprints.soton.ac.uk/id/eprint/351568
PURE UUID: 18d8b4c9-d0ba-407a-8f6c-77808b41f0b8

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Date deposited: 26 Apr 2013 11:47
Last modified: 24 Oct 2017 16:31

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Contributors

Author: Boon Pin Peh
Author: Christos Papavassiliou
Author: Christofer Toumazou

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