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Resistive switching of oxygen enhanced TiO2 thin-film devices

Resistive switching of oxygen enhanced TiO2 thin-film devices
Resistive switching of oxygen enhanced TiO2 thin-film devices
In this work, we investigate the effect of oxygen-enhanced TiO2 thin films on the switching dynamics of Pt/TiO2/Pt memristive nanodevices. We demonstrate that such devices can be used as resistive random access memory (RRAM) cells without required electroforming. We experimentally demonstrate that devices based on TiO2 films fabricated via sputtering with partial pressures of Ar/O2 6/6 sccm and 2/10 sccm show OFF/ON ratios of six and two orders of magnitude, respectively. Additionally, it was found that a lower O2 flow during sputtering of TiO2 allows for lower energy requirements for switching the devices from a high to low resistive state.
0003-6951
013506-[4 pages]
Salaoru, Iulia
bfec063f-78ec-471f-8139-eb4e4787fb21
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Toumazou, Christofer
7a856162-f970-4ef4-8a57-5822d8a69281
Salaoru, Iulia
bfec063f-78ec-471f-8139-eb4e4787fb21
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Toumazou, Christofer
7a856162-f970-4ef4-8a57-5822d8a69281

Salaoru, Iulia, Prodromakis, Themistoklis, Khiat, Ali and Toumazou, Christofer (2013) Resistive switching of oxygen enhanced TiO2 thin-film devices. Applied Physics Letters, 102 (1), 013506-[4 pages]. (doi:10.1063/1.4774089).

Record type: Article

Abstract

In this work, we investigate the effect of oxygen-enhanced TiO2 thin films on the switching dynamics of Pt/TiO2/Pt memristive nanodevices. We demonstrate that such devices can be used as resistive random access memory (RRAM) cells without required electroforming. We experimentally demonstrate that devices based on TiO2 films fabricated via sputtering with partial pressures of Ar/O2 6/6 sccm and 2/10 sccm show OFF/ON ratios of six and two orders of magnitude, respectively. Additionally, it was found that a lower O2 flow during sputtering of TiO2 allows for lower energy requirements for switching the devices from a high to low resistive state.

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More information

Published date: 2013
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 351572
URI: http://eprints.soton.ac.uk/id/eprint/351572
DOI: doi:10.1063/1.4774089
ISSN: 0003-6951
PURE UUID: 5dc97659-83a8-442f-90f0-898fca1fab26
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 23 Apr 2013 10:29
Last modified: 14 Mar 2024 13:41

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Contributors

Author: Iulia Salaoru
Author: Themistoklis Prodromakis ORCID iD
Author: Ali Khiat
Author: Christofer Toumazou

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