The University of Southampton
University of Southampton Institutional Repository

Resistive switching of oxygen enhanced TiO2 thin-film devices

Resistive switching of oxygen enhanced TiO2 thin-film devices
Resistive switching of oxygen enhanced TiO2 thin-film devices
In this work, we investigate the effect of oxygen-enhanced TiO2 thin films on the switching dynamics of Pt/TiO2/Pt memristive nanodevices. We demonstrate that such devices can be used as resistive random access memory (RRAM) cells without required electroforming. We experimentally demonstrate that devices based on TiO2 films fabricated via sputtering with partial pressures of Ar/O2 6/6 sccm and 2/10 sccm show OFF/ON ratios of six and two orders of magnitude, respectively. Additionally, it was found that a lower O2 flow during sputtering of TiO2 allows for lower energy requirements for switching the devices from a high to low resistive state.
0003-6951
013506-[4 pages]
Salaoru, Iulia
bfec063f-78ec-471f-8139-eb4e4787fb21
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Khiat, Ali
86271e14-a340-41bb-9eef-be102ee85400
Toumazou, Christofer
7a856162-f970-4ef4-8a57-5822d8a69281
Salaoru, Iulia
bfec063f-78ec-471f-8139-eb4e4787fb21
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Khiat, Ali
86271e14-a340-41bb-9eef-be102ee85400
Toumazou, Christofer
7a856162-f970-4ef4-8a57-5822d8a69281

Salaoru, Iulia, Prodromakis, Themistoklis, Khiat, Ali and Toumazou, Christofer (2013) Resistive switching of oxygen enhanced TiO2 thin-film devices Applied Physics Letters, 102, (1), 013506-[4 pages]. (doi:10.1063/1.4774089).

Record type: Article

Abstract

In this work, we investigate the effect of oxygen-enhanced TiO2 thin films on the switching dynamics of Pt/TiO2/Pt memristive nanodevices. We demonstrate that such devices can be used as resistive random access memory (RRAM) cells without required electroforming. We experimentally demonstrate that devices based on TiO2 films fabricated via sputtering with partial pressures of Ar/O2 6/6 sccm and 2/10 sccm show OFF/ON ratios of six and two orders of magnitude, respectively. Additionally, it was found that a lower O2 flow during sputtering of TiO2 allows for lower energy requirements for switching the devices from a high to low resistive state.

Full text not available from this repository.

More information

Published date: 2013
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 351572
URI: http://eprints.soton.ac.uk/id/eprint/351572
ISSN: 0003-6951
PURE UUID: 5dc97659-83a8-442f-90f0-898fca1fab26

Catalogue record

Date deposited: 23 Apr 2013 10:29
Last modified: 18 Jul 2017 04:25

Export record

Altmetrics

Contributors

Author: Iulia Salaoru
Author: Ali Khiat
Author: Christofer Toumazou

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Library staff edit
Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×