A low-cost disposable chemical sensing platform based on discrete components
A low-cost disposable chemical sensing platform based on discrete components
A method of fabricating low-cost chemical sensing platforms is presented. The device utilizes a discrete metal-oxide-semiconductor field-effect transistor to detect ionic concentrations in electrolytes, with particular emphasis to pH. Measured results indicate a chemical sensitivity of 36.5 mV/pH, while the device exhibits low-leakage currents (in picoamperes) and a drift of 9 mV/h. The proposed technique has a great potential for disposable implementations, while the sensing selectivity of the device can be easily altered, resulting into a versatile platform.
chemical sensor, discrete ion-sensitive field-effect transistor, isfet, extended gate
417-419
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Liu, Yan
3d2550f3-df3b-46fd-a49e-511f7abe6424
Toumazou, Chris
1541f8dd-53b0-41a3-8fbd-5351c3919194
March 2011
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Liu, Yan
3d2550f3-df3b-46fd-a49e-511f7abe6424
Toumazou, Chris
1541f8dd-53b0-41a3-8fbd-5351c3919194
Prodromakis, Themistoklis, Liu, Yan and Toumazou, Chris
(2011)
A low-cost disposable chemical sensing platform based on discrete components.
IEEE Electron Device Letters, 32 (3), .
(doi:10.1109/LED.2010.2099098).
Abstract
A method of fabricating low-cost chemical sensing platforms is presented. The device utilizes a discrete metal-oxide-semiconductor field-effect transistor to detect ionic concentrations in electrolytes, with particular emphasis to pH. Measured results indicate a chemical sensitivity of 36.5 mV/pH, while the device exhibits low-leakage currents (in picoamperes) and a drift of 9 mV/h. The proposed technique has a great potential for disposable implementations, while the sensing selectivity of the device can be easily altered, resulting into a versatile platform.
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Published date: March 2011
Keywords:
chemical sensor, discrete ion-sensitive field-effect transistor, isfet, extended gate
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 351574
URI: http://eprints.soton.ac.uk/id/eprint/351574
ISSN: 0741-3106
PURE UUID: 329617ea-1985-4f19-af68-c43dfae60281
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Date deposited: 29 Apr 2013 10:45
Last modified: 14 Mar 2024 13:41
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Contributors
Author:
Themistoklis Prodromakis
Author:
Yan Liu
Author:
Chris Toumazou
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