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Germanium antimony lateral nanowire phase change memory by chemical vapor deposition

Germanium antimony lateral nanowire phase change memory by chemical vapor deposition
Germanium antimony lateral nanowire phase change memory by chemical vapor deposition
The phase change technology behind the current rewritable optical disks and the latest generation of electronic memories has provided clear commercial and technological advances for the field of data storage; by virtue of the many key attributes chalcogenide materials offer. In this work, germanium antimony (Ge-Sb) lateral nanowire phase change memory devices have been fabricated from thin films deposited by chemical vapor deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875 °C. The fabricated devices have been characterized electrically demonstrating reversible phase change, while a lowering in power consumption in these memory cells is observed with scaling of the geometry of the nanowire cells. The results are investigated by electrothermal modeling to understand the temperature of the devices during operation. These prototype CVD-grown Ge-Sb lateral nanowire devices show promise for applications such as phase-change memory and optical, electronic, and plasmonic switching.
chemical vapor deposition, germanium antimony, nanowires, phase change memory
0370-1972
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Ou, J-Y.
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Ou, J-Y.
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0

Gholipour, Behrad, Huang, Chung-Che, Ou, J-Y. and Hewak, Daniel W. (2013) Germanium antimony lateral nanowire phase change memory by chemical vapor deposition. Physica Status Solidi (b). (doi:10.1002/pssb.201248515).

Record type: Article

Abstract

The phase change technology behind the current rewritable optical disks and the latest generation of electronic memories has provided clear commercial and technological advances for the field of data storage; by virtue of the many key attributes chalcogenide materials offer. In this work, germanium antimony (Ge-Sb) lateral nanowire phase change memory devices have been fabricated from thin films deposited by chemical vapor deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875 °C. The fabricated devices have been characterized electrically demonstrating reversible phase change, while a lowering in power consumption in these memory cells is observed with scaling of the geometry of the nanowire cells. The results are investigated by electrothermal modeling to understand the temperature of the devices during operation. These prototype CVD-grown Ge-Sb lateral nanowire devices show promise for applications such as phase-change memory and optical, electronic, and plasmonic switching.

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More information

e-pub ahead of print date: 26 April 2013
Keywords: chemical vapor deposition, germanium antimony, nanowires, phase change memory
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 352144
URI: http://eprints.soton.ac.uk/id/eprint/352144
ISSN: 0370-1972
PURE UUID: 840c270d-a382-4873-8069-eccf1230e002
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for J-Y. Ou: ORCID iD orcid.org/0000-0001-8028-6130
ORCID for Daniel W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 07 May 2013 11:12
Last modified: 18 Feb 2021 17:17

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