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Tuning the influence of metal nanoparticles on ZnO photoluminescence by atomic-layer-deposited dielectric spacer

Tuning the influence of metal nanoparticles on ZnO photoluminescence by atomic-layer-deposited dielectric spacer
Tuning the influence of metal nanoparticles on ZnO photoluminescence by atomic-layer-deposited dielectric spacer
There is increasing interest in tuning the optical and optoelectronic properties of semiconductor nanostructures using metal nanoparticles in their applications in light-emitting and detection devices. In this work we study the effect of a dielectric Al2O3 gap layer (i.e., spacer) on the interaction of ZnO nanowires with metal nanoparticles. The Al2O3 spacer thickness is varied in the range of 1-25 nm using atomic layer deposition (ALD) in order to tune the interaction. It is found that ~5 nm is an optimum spacer thickness common for most metals, although the enhancement ratio of the near-bandedge emission differs among the metals. Consistent results are obtained from both photoluminescence (PL) and cathodoluminescence (CL) spectroscopies, with the latter being applied to the optical properties of individual semiconductor/metal nanoheterostructures. The interaction is primarily proposed to be related to coupling of ZnO excitons with local surface plasmons of metals, although other mechanisms should not be ruled out.
153-160
Liu, Monan
15967604-5005-42ac-92b6-c85920bea487
Chen, Rui
941fa635-535a-425b-86bb-3ef9476bb571
Adamo, Giorgio
73480dbd-5d3e-415a-b569-9606b3dbeecc
MacDonald, Kevin F.
76c84116-aad1-4973-b917-7ca63935dba5
Sie, Edbert J.
a7e057eb-f2d9-4f87-9044-0b586d3f6142
Sum, Tze Chien
7fbb4c15-5d7d-43bd-ba1b-5647dd87f62a
Zheludev, Nikolay I.
32fb6af7-97e4-4d11-bca6-805745e40cc6
Sun, Handong
9a87be9c-04a3-4fef-a8a8-a46bd37f109d
Fan, Hong Jin
f25a05e4-ca72-434f-8fd9-1f37258dfa98
Liu, Monan
15967604-5005-42ac-92b6-c85920bea487
Chen, Rui
941fa635-535a-425b-86bb-3ef9476bb571
Adamo, Giorgio
73480dbd-5d3e-415a-b569-9606b3dbeecc
MacDonald, Kevin F.
76c84116-aad1-4973-b917-7ca63935dba5
Sie, Edbert J.
a7e057eb-f2d9-4f87-9044-0b586d3f6142
Sum, Tze Chien
7fbb4c15-5d7d-43bd-ba1b-5647dd87f62a
Zheludev, Nikolay I.
32fb6af7-97e4-4d11-bca6-805745e40cc6
Sun, Handong
9a87be9c-04a3-4fef-a8a8-a46bd37f109d
Fan, Hong Jin
f25a05e4-ca72-434f-8fd9-1f37258dfa98

Liu, Monan, Chen, Rui, Adamo, Giorgio, MacDonald, Kevin F., Sie, Edbert J., Sum, Tze Chien, Zheludev, Nikolay I., Sun, Handong and Fan, Hong Jin (2013) Tuning the influence of metal nanoparticles on ZnO photoluminescence by atomic-layer-deposited dielectric spacer. Nanophotonics, 2 (2), 153-160. (doi:10.1515/nanoph-2012-0040).

Record type: Article

Abstract

There is increasing interest in tuning the optical and optoelectronic properties of semiconductor nanostructures using metal nanoparticles in their applications in light-emitting and detection devices. In this work we study the effect of a dielectric Al2O3 gap layer (i.e., spacer) on the interaction of ZnO nanowires with metal nanoparticles. The Al2O3 spacer thickness is varied in the range of 1-25 nm using atomic layer deposition (ALD) in order to tune the interaction. It is found that ~5 nm is an optimum spacer thickness common for most metals, although the enhancement ratio of the near-bandedge emission differs among the metals. Consistent results are obtained from both photoluminescence (PL) and cathodoluminescence (CL) spectroscopies, with the latter being applied to the optical properties of individual semiconductor/metal nanoheterostructures. The interaction is primarily proposed to be related to coupling of ZnO excitons with local surface plasmons of metals, although other mechanisms should not be ruled out.

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Published date: 26 March 2013
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 352221
URI: https://eprints.soton.ac.uk/id/eprint/352221
PURE UUID: 8db389d7-d5eb-47eb-a9f8-a5207d50c2fc
ORCID for Kevin F. MacDonald: ORCID iD orcid.org/0000-0002-3877-2976
ORCID for Nikolay I. Zheludev: ORCID iD orcid.org/0000-0002-1013-6636

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Date deposited: 07 May 2013 15:03
Last modified: 30 Nov 2019 01:41

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