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Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm

Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm
Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm
The design and characterization of silicon-on-insulator mid- infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.
1094-4087
11659-11669
Muneeb, M.
e554def4-a834-4281-b220-83426551224b
Chen, Xia
64f6ab92-ca11-4489-8c03-52bc986209ae
Verheyen, P.
8adc405c-9caa-4633-a5db-4b2e6db16916
Pathak, S.
be6c022a-e273-4835-b1fc-b0b00ec42671
Malik, A.
70d1befd-41db-4d9b-a5f1-5edcac1ffd62
Nedeljković, Miloš
b64e21c2-1b95-479d-a35c-3456dff8c796
Van Campenhout, J.
d22f0b92-597d-47ab-ba67-1c17969ccd90
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Roelkens, G.C.
7fcfcca9-fac7-45f8-88d0-32a55a820452
Muneeb, M.
e554def4-a834-4281-b220-83426551224b
Chen, Xia
64f6ab92-ca11-4489-8c03-52bc986209ae
Verheyen, P.
8adc405c-9caa-4633-a5db-4b2e6db16916
Pathak, S.
be6c022a-e273-4835-b1fc-b0b00ec42671
Malik, A.
70d1befd-41db-4d9b-a5f1-5edcac1ffd62
Nedeljković, Miloš
b64e21c2-1b95-479d-a35c-3456dff8c796
Van Campenhout, J.
d22f0b92-597d-47ab-ba67-1c17969ccd90
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Roelkens, G.C.
7fcfcca9-fac7-45f8-88d0-32a55a820452

Muneeb, M., Chen, Xia, Verheyen, P., Pathak, S., Malik, A., Nedeljković, Miloš, Van Campenhout, J., Mashanovich, Goran Z. and Roelkens, G.C. (2013) Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm. Optics Express, 21 (10), 11659-11669. (doi:10.1364/OE.21.011659).

Record type: Article

Abstract

The design and characterization of silicon-on-insulator mid- infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

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e-pub ahead of print date: 6 May 2013
Published date: 20 May 2013
Organisations: Optoelectronics Research Centre, Photonic Systems Circuits & Sensors

Identifiers

Local EPrints ID: 352973
URI: http://eprints.soton.ac.uk/id/eprint/352973
ISSN: 1094-4087
PURE UUID: 00052674-705c-4fd1-a626-1afc1b9bc7cf
ORCID for Xia Chen: ORCID iD orcid.org/0000-0002-0994-5401
ORCID for Miloš Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911
ORCID for Goran Z. Mashanovich: ORCID iD orcid.org/0000-0003-2954-5138

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Date deposited: 28 May 2013 12:31
Last modified: 29 Oct 2024 02:45

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Contributors

Author: M. Muneeb
Author: Xia Chen ORCID iD
Author: P. Verheyen
Author: S. Pathak
Author: A. Malik
Author: Miloš Nedeljković ORCID iD
Author: J. Van Campenhout
Author: Goran Z. Mashanovich ORCID iD
Author: G.C. Roelkens

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