The University of Southampton
University of Southampton Institutional Repository

Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm

Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm
Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm
The design and characterization of silicon-on-insulator mid- infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.
1094-4087
11659-11669
Muneeb, M.
e554def4-a834-4281-b220-83426551224b
Chen, Xia
64f6ab92-ca11-4489-8c03-52bc986209ae
Verheyen, P.
8adc405c-9caa-4633-a5db-4b2e6db16916
Pathak, S.
be6c022a-e273-4835-b1fc-b0b00ec42671
Malik, A.
697af50e-7dfb-4e4e-815c-b39ae4e8ff7b
Nedeljković, Milos
b64e21c2-1b95-479d-a35c-3456dff8c796
Van Campenhout, J.
d22f0b92-597d-47ab-ba67-1c17969ccd90
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Roelkens, G.C.
7fcfcca9-fac7-45f8-88d0-32a55a820452
Muneeb, M.
e554def4-a834-4281-b220-83426551224b
Chen, Xia
64f6ab92-ca11-4489-8c03-52bc986209ae
Verheyen, P.
8adc405c-9caa-4633-a5db-4b2e6db16916
Pathak, S.
be6c022a-e273-4835-b1fc-b0b00ec42671
Malik, A.
697af50e-7dfb-4e4e-815c-b39ae4e8ff7b
Nedeljković, Milos
b64e21c2-1b95-479d-a35c-3456dff8c796
Van Campenhout, J.
d22f0b92-597d-47ab-ba67-1c17969ccd90
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Roelkens, G.C.
7fcfcca9-fac7-45f8-88d0-32a55a820452

Muneeb, M., Chen, Xia, Verheyen, P., Pathak, S., Malik, A., Nedeljković, Milos, Van Campenhout, J., Mashanovich, Goran Z. and Roelkens, G.C. (2013) Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm. Optics Express, 21 (10), 11659-11669. (doi:10.1364/OE.21.011659).

Record type: Article

Abstract

The design and characterization of silicon-on-insulator mid- infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

Text
oe-21-10-11659.pdf - Accepted Manuscript
Download (2MB)

More information

e-pub ahead of print date: 6 May 2013
Published date: 20 May 2013
Organisations: Optoelectronics Research Centre, Photonic Systems Circuits & Sensors

Identifiers

Local EPrints ID: 352973
URI: https://eprints.soton.ac.uk/id/eprint/352973
ISSN: 1094-4087
PURE UUID: 00052674-705c-4fd1-a626-1afc1b9bc7cf
ORCID for Xia Chen: ORCID iD orcid.org/0000-0002-0994-5401
ORCID for Milos Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911

Catalogue record

Date deposited: 28 May 2013 12:31
Last modified: 12 Nov 2019 01:38

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×