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Intrinsic optical gain of ultrathin silicon quantum wells from first-principles calculations

Intrinsic optical gain of ultrathin silicon quantum wells from first-principles calculations
Intrinsic optical gain of ultrathin silicon quantum wells from first-principles calculations
Optical gains of ultrathin Si(001) quantum wells are calculated from first principles, and found to be positive because of an intrinsic quantum confinement effect. The gain of the ultrathin silicon film is comparable to that of the bulk GaAs if the carrier density is large enough. The impact of surface structure of the silicon film on the efficiency of light emission is also investigated and we found that SiO2 crystal that forms a strainless connection with a Si(001) surface such as quartz enhances optical gain.
1550-235X
3308
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Yuji, Suwa
2ba75bf2-b050-41df-ac66-9435a0ae7a07
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Yuji, Suwa
2ba75bf2-b050-41df-ac66-9435a0ae7a07

Saito, Shinichi and Yuji, Suwa (2009) Intrinsic optical gain of ultrathin silicon quantum wells from first-principles calculations. Physical Review B, 79 (23), 3308. (doi:10.1103/PhysRevB.79.233308).

Record type: Article

Abstract

Optical gains of ultrathin Si(001) quantum wells are calculated from first principles, and found to be positive because of an intrinsic quantum confinement effect. The gain of the ultrathin silicon film is comparable to that of the bulk GaAs if the carrier density is large enough. The impact of surface structure of the silicon film on the efficiency of light emission is also investigated and we found that SiO2 crystal that forms a strainless connection with a Si(001) surface such as quartz enhances optical gain.

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Published date: 24 June 2009
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 353143
URI: http://eprints.soton.ac.uk/id/eprint/353143
DOI: doi:10.1103/PhysRevB.79.233308
ISSN: 1550-235X
PURE UUID: 0e45127e-f637-41ed-b13c-fbbce1cc7ea9
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

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Date deposited: 30 May 2013 13:54
Last modified: 15 Mar 2024 03:43

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Contributors

Author: Shinichi Saito ORCID iD
Author: Suwa Yuji

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