The University of Southampton
University of Southampton Institutional Repository

Intrinsic optical gain of ultrathin silicon quantum wells from first-principles calculations

Intrinsic optical gain of ultrathin silicon quantum wells from first-principles calculations
Intrinsic optical gain of ultrathin silicon quantum wells from first-principles calculations
Optical gains of ultrathin Si(001) quantum wells are calculated from first principles, and found to be positive because of an intrinsic quantum confinement effect. The gain of the ultrathin silicon film is comparable to that of the bulk GaAs if the carrier density is large enough. The impact of surface structure of the silicon film on the efficiency of light emission is also investigated and we found that SiO2 crystal that forms a strainless connection with a Si(001) surface such as quartz enhances optical gain.
1550-235X
3308
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Yuji, Suwa
2ba75bf2-b050-41df-ac66-9435a0ae7a07
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Yuji, Suwa
2ba75bf2-b050-41df-ac66-9435a0ae7a07

Saito, Shinichi and Yuji, Suwa (2009) Intrinsic optical gain of ultrathin silicon quantum wells from first-principles calculations. Physical Review B, 79 (23), 3308. (doi:10.1103/PhysRevB.79.233308).

Record type: Article

Abstract

Optical gains of ultrathin Si(001) quantum wells are calculated from first principles, and found to be positive because of an intrinsic quantum confinement effect. The gain of the ultrathin silicon film is comparable to that of the bulk GaAs if the carrier density is large enough. The impact of surface structure of the silicon film on the efficiency of light emission is also investigated and we found that SiO2 crystal that forms a strainless connection with a Si(001) surface such as quartz enhances optical gain.

PDF
PRB09.pdf - Version of Record
Download (437kB)

More information

Published date: 24 June 2009
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 353143
URI: https://eprints.soton.ac.uk/id/eprint/353143
ISSN: 1550-235X
PURE UUID: 0e45127e-f637-41ed-b13c-fbbce1cc7ea9
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 30 May 2013 13:54
Last modified: 06 Jun 2018 12:28

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×