Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well
Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well
We describe the observation of stimulated emissions by current injections into a silicon quantum well. The device consists of a free standing membrane with a distributed feedback resonant cavity fabricated by state-of-the-art silicon processes. The emission spectra have multimode structures peaked in the near-infrared region above the submilliampere threshold currents at room temperatures. Consequently, electronics and photonics should be able to be converged on chips by using silicon quantum well laser diodes.
1101-1103
Saito, S.
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Suwa, Y.
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Arimoto, H.
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Sakuma, N.
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Hisamoto, D.
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Uchiyama, H.
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Yamamoto, J.
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Sakamizu, T.
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Mine, T.
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Kimura, S.
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Sugawara, T.
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Aoki, M.
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14 December 2009
Saito, S.
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Suwa, Y.
fc26f520-628d-49e2-b8ee-15ee9a1c9271
Arimoto, H.
1a276a3d-8a9e-4064-865f-eeacff82acc6
Sakuma, N.
9ec84aaf-3b6a-448d-a5a2-4356bd02f03a
Hisamoto, D.
2be2e1fe-9975-4f24-a6ab-be930aa67a7b
Uchiyama, H.
ca568614-1e0a-4993-9f1c-1ca10c53a719
Yamamoto, J.
36d146fc-c427-4096-8759-a9ee4382133e
Sakamizu, T.
131c95af-0082-4d29-b1e6-2016c6404124
Mine, T.
edf24fad-1af6-4006-97da-1018309cd5e7
Kimura, S.
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Sugawara, T.
cfb163f4-553d-4eef-8a4b-3db26e05e57e
Aoki, M.
bf1ccbc5-7cfc-4889-a382-a988280d6582
Saito, S., Suwa, Y., Arimoto, H., Sakuma, N., Hisamoto, D., Uchiyama, H., Yamamoto, J., Sakamizu, T., Mine, T., Kimura, S., Sugawara, T. and Aoki, M.
(2009)
Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well.
Applied Physics Letters, 95 (24), .
(doi:10.1063/1.3273367).
Abstract
We describe the observation of stimulated emissions by current injections into a silicon quantum well. The device consists of a free standing membrane with a distributed feedback resonant cavity fabricated by state-of-the-art silicon processes. The emission spectra have multimode structures peaked in the near-infrared region above the submilliampere threshold currents at room temperatures. Consequently, electronics and photonics should be able to be converged on chips by using silicon quantum well laser diodes.
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Published date: 14 December 2009
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 353144
URI: http://eprints.soton.ac.uk/id/eprint/353144
ISSN: 0003-6951
PURE UUID: f0809e14-1557-4bdb-8ae1-4c55afa2e9bd
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Date deposited: 30 May 2013 15:15
Last modified: 15 Mar 2024 03:43
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Contributors
Author:
S. Saito
Author:
Y. Suwa
Author:
H. Arimoto
Author:
N. Sakuma
Author:
D. Hisamoto
Author:
H. Uchiyama
Author:
J. Yamamoto
Author:
T. Sakamizu
Author:
T. Mine
Author:
S. Kimura
Author:
T. Sugawara
Author:
M. Aoki
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