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Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well

Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well
Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well
We describe the observation of stimulated emissions by current injections into a silicon quantum well. The device consists of a free standing membrane with a distributed feedback resonant cavity fabricated by state-of-the-art silicon processes. The emission spectra have multimode structures peaked in the near-infrared region above the submilliampere threshold currents at room temperatures. Consequently, electronics and photonics should be able to be converged on chips by using silicon quantum well laser diodes.
0003-6951
1101-1103
Saito, S.
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Suwa, Y.
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Arimoto, H.
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Sakuma, N.
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Hisamoto, D.
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Uchiyama, H.
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Yamamoto, J.
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Sakamizu, T.
131c95af-0082-4d29-b1e6-2016c6404124
Mine, T.
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Kimura, S.
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Sugawara, T.
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Aoki, M.
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Saito, S.
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Suwa, Y.
fc26f520-628d-49e2-b8ee-15ee9a1c9271
Arimoto, H.
1a276a3d-8a9e-4064-865f-eeacff82acc6
Sakuma, N.
9ec84aaf-3b6a-448d-a5a2-4356bd02f03a
Hisamoto, D.
2be2e1fe-9975-4f24-a6ab-be930aa67a7b
Uchiyama, H.
ca568614-1e0a-4993-9f1c-1ca10c53a719
Yamamoto, J.
36d146fc-c427-4096-8759-a9ee4382133e
Sakamizu, T.
131c95af-0082-4d29-b1e6-2016c6404124
Mine, T.
edf24fad-1af6-4006-97da-1018309cd5e7
Kimura, S.
9382a7e2-9912-4fdb-aa7a-b28c29587136
Sugawara, T.
cfb163f4-553d-4eef-8a4b-3db26e05e57e
Aoki, M.
bf1ccbc5-7cfc-4889-a382-a988280d6582

Saito, S., Suwa, Y., Arimoto, H., Sakuma, N., Hisamoto, D., Uchiyama, H., Yamamoto, J., Sakamizu, T., Mine, T., Kimura, S., Sugawara, T. and Aoki, M. (2009) Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well. Applied Physics Letters, 95 (24), 1101-1103. (doi:10.1063/1.3273367).

Record type: Article

Abstract

We describe the observation of stimulated emissions by current injections into a silicon quantum well. The device consists of a free standing membrane with a distributed feedback resonant cavity fabricated by state-of-the-art silicon processes. The emission spectra have multimode structures peaked in the near-infrared region above the submilliampere threshold currents at room temperatures. Consequently, electronics and photonics should be able to be converged on chips by using silicon quantum well laser diodes.

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Published date: 14 December 2009
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 353144
URI: https://eprints.soton.ac.uk/id/eprint/353144
ISSN: 0003-6951
PURE UUID: f0809e14-1557-4bdb-8ae1-4c55afa2e9bd
ORCID for S. Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 30 May 2013 15:15
Last modified: 10 Sep 2019 00:37

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